Sensitivity enhancement of chemically amplified EUV resists by adding acid-generating promoters
The trade-off relationship between sensitivity, resolution, and roughness is a serious problem in the development of extreme ultraviolet (EUV) resist materials. Increasing the acid-generation efficiency is an effective solution to this trade-off problem. Chemically amplified resists (CARs) remain im...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2017-06, Vol.56 (6S1), p.6 |
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| container_issue | 6S1 |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 56 |
| creator | Fujii, Shinya Okamoto, Kazumasa Yamamoto, Hiroki Kozawa, Takahiro Itani, Toshiro |
| description | The trade-off relationship between sensitivity, resolution, and roughness is a serious problem in the development of extreme ultraviolet (EUV) resist materials. Increasing the acid-generation efficiency is an effective solution to this trade-off problem. Chemically amplified resists (CARs) remain important for EUV lithography because of their longstanding use in photolithography. In this study, the feasibility and mechanism of improving CAR performance by adding acid-generating promoters were investigated. It was confirmed that di-p-tolyl sulfone acts as both a deprotonation promoter and a recombination inhibitor, which enhances the acid-generation efficiency and improves the performance of CARs in lithographies using ionizing radiation such as EUV and electron beams. |
| doi_str_mv | 10.7567/JJAP.56.06GD01 |
| format | Article |
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Increasing the acid-generation efficiency is an effective solution to this trade-off problem. Chemically amplified resists (CARs) remain important for EUV lithography because of their longstanding use in photolithography. In this study, the feasibility and mechanism of improving CAR performance by adding acid-generating promoters were investigated. 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J. Appl. Phys</addtitle><description>The trade-off relationship between sensitivity, resolution, and roughness is a serious problem in the development of extreme ultraviolet (EUV) resist materials. Increasing the acid-generation efficiency is an effective solution to this trade-off problem. Chemically amplified resists (CARs) remain important for EUV lithography because of their longstanding use in photolithography. In this study, the feasibility and mechanism of improving CAR performance by adding acid-generating promoters were investigated. It was confirmed that di-p-tolyl sulfone acts as both a deprotonation promoter and a recombination inhibitor, which enhances the acid-generation efficiency and improves the performance of CARs in lithographies using ionizing radiation such as EUV and electron beams.</description><subject>Acids</subject><subject>Amplification</subject><subject>Electron beam lithography</subject><subject>Feasibility studies</subject><subject>Ionizing radiation</subject><subject>Performance enhancement</subject><subject>Photolithography</subject><subject>Resists</subject><subject>Sensitivity enhancement</subject><subject>Tradeoffs</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqVkM1Lw0AUxBdRsFavngPehMTdzX4kx1JrtRQUar0um-xLu6H5cDcV-t-bkIJnT4_h_WYGBqF7giPJhXxarWYfERcRFstnTC7QhMRMhgwLfokmGFMSspTSa3TjfdlLwRmZILWB2tvO_tjuFEC913UOFdRd0BRBvofK5vpwOAW6ag-2sGCCxfYrcOCt73yQ9Q9jbL0LdG5NuIManO4G3bqmajpw_hZdFfrg4e58p2j7svicv4br9-XbfLYOc4bjLix0kRYUc0NNkgstGRitE06Z4TIzWErQNAUdiwwTzmRGITYSJ3HWf0iap_EUPYy5ffP3EXynyubo6r5SUcx4zLFMBioaqdw13jsoVOtspd1JEayGEdUwouJCjSP2hsfRYJv2L_FfcFnqdoDEhpxB1Zoi_gXq0oGs</recordid><startdate>20170601</startdate><enddate>20170601</enddate><creator>Fujii, Shinya</creator><creator>Okamoto, Kazumasa</creator><creator>Yamamoto, Hiroki</creator><creator>Kozawa, Takahiro</creator><creator>Itani, Toshiro</creator><general>The Japan Society of Applied Physics</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20170601</creationdate><title>Sensitivity enhancement of chemically amplified EUV resists by adding acid-generating promoters</title><author>Fujii, Shinya ; Okamoto, Kazumasa ; Yamamoto, Hiroki ; Kozawa, Takahiro ; Itani, Toshiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-faf9f205d2d8c6a74edaa8524d57bd077ea29ea36b01547b2e3d7083b77e19c93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Acids</topic><topic>Amplification</topic><topic>Electron beam lithography</topic><topic>Feasibility studies</topic><topic>Ionizing radiation</topic><topic>Performance enhancement</topic><topic>Photolithography</topic><topic>Resists</topic><topic>Sensitivity enhancement</topic><topic>Tradeoffs</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fujii, Shinya</creatorcontrib><creatorcontrib>Okamoto, Kazumasa</creatorcontrib><creatorcontrib>Yamamoto, Hiroki</creatorcontrib><creatorcontrib>Kozawa, Takahiro</creatorcontrib><creatorcontrib>Itani, Toshiro</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fujii, Shinya</au><au>Okamoto, Kazumasa</au><au>Yamamoto, Hiroki</au><au>Kozawa, Takahiro</au><au>Itani, Toshiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sensitivity enhancement of chemically amplified EUV resists by adding acid-generating promoters</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2017-06-01</date><risdate>2017</risdate><volume>56</volume><issue>6S1</issue><spage>6</spage><pages>6-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>The trade-off relationship between sensitivity, resolution, and roughness is a serious problem in the development of extreme ultraviolet (EUV) resist materials. Increasing the acid-generation efficiency is an effective solution to this trade-off problem. Chemically amplified resists (CARs) remain important for EUV lithography because of their longstanding use in photolithography. In this study, the feasibility and mechanism of improving CAR performance by adding acid-generating promoters were investigated. 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| source | HEAL-Link subscriptions: Institute of Physics (IOP) Journals; Institute of Physics Journals |
| subjects | Acids Amplification Electron beam lithography Feasibility studies Ionizing radiation Performance enhancement Photolithography Resists Sensitivity enhancement Tradeoffs |
| title | Sensitivity enhancement of chemically amplified EUV resists by adding acid-generating promoters |
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