High-density formation of Ta nanodot induced by remote hydrogen plasma

We have studied the formation of Ta nanodots (NDs) on thermally grown SiO2/Si by exposing a thin metal layer to a remote H2 plasma (H2-RP) without external heating. Atomic force microscopy (AFM) analyses show that a combination of a Ge (∼30.0 nm)/Ta (∼2.0 nm) bilayer stack with subsequent H2-RP expo...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2017-01, Vol.56 (1S), p.1-01AE01
Hauptverfasser:	Wang, Yaping, Takeuchi, Daichi, Ohta, Akio, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Exposure Formations Nanostructure Photoelectron spectroscopy Silicon dioxide Stacks Tantalum X rays
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creator	Wang, Yaping Takeuchi, Daichi Ohta, Akio Ikeda, Mitsuhisa Makihara, Katsunori Miyazaki, Seiichi
description	We have studied the formation of Ta nanodots (NDs) on thermally grown SiO2/Si by exposing a thin metal layer to a remote H2 plasma (H2-RP) without external heating. Atomic force microscopy (AFM) analyses show that a combination of a Ge (∼30.0 nm)/Ta (∼2.0 nm) bilayer stack with subsequent H2-RP exposure is effective for forming electrically isolated Ta NDs with an areal dot density as high as ∼1011 cm−2, where the Ge layer plays an important role as a barrier layer against the oxidation of the ultrathin Ta layer surface. The change in the chemical structure of the Ge/Ta bilayer stack on SiO2/Si upon Ta ND formation by H2-RP exposure is investigated by hard X-ray photoemission spectroscopy (HAXPES) and X-ray photoelectron spectroscopy (XPS).
doi_str_mv	10.7567/JJAP.56.01AE01
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J. Appl. Phys</addtitle><description>We have studied the formation of Ta nanodots (NDs) on thermally grown SiO2/Si by exposing a thin metal layer to a remote H2 plasma (H2-RP) without external heating. Atomic force microscopy (AFM) analyses show that a combination of a Ge (∼30.0 nm)/Ta (∼2.0 nm) bilayer stack with subsequent H2-RP exposure is effective for forming electrically isolated Ta NDs with an areal dot density as high as ∼1011 cm−2, where the Ge layer plays an important role as a barrier layer against the oxidation of the ultrathin Ta layer surface. 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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects	Exposure Formations Nanostructure Photoelectron spectroscopy Silicon dioxide Stacks Tantalum X rays
title	High-density formation of Ta nanodot induced by remote hydrogen plasma
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