First-principles study on oxidation of Ge and its interface electronic structures

We review a series of first-principles studies on the defect generation mechanism and electronic structures of the Ge/GeO2 interface. Several experimental and theoretical studies proved that Si atoms at the Si/SiO2 interface are emitted to release interface stress. In contrast, total-energy calculat...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2016-08, Vol.55 (8S2), p.8-08PA01
Hauptverfasser:	Ono, Tomoya, Saito, Shoichiro, Iwase, Shigeru
Format:	Artikel
Sprache:	eng
Schlagworte:	Bonding Defects Density Electronic structure Germanium oxides Leakage current Mathematical analysis Silicon dioxide
Online-Zugang:	Volltext
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