Design and performance analysis of extended wavelength InGaAs near-infrared photodetectors

In this work, we investigate the performance of InGaAs p-i-n photodetectors with cut-off wavelengths near 2.5 µm. The influences of different cap materials on the optoelectronic properties of InGaAs detector are also compared and discussed. The result indicates that the InAlAs used as cap layer can...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2015-10, Vol.54 (10), p.104301
Hauptverfasser:	Ma, Jun, Zhang, Zhiwei, Miao, Guoqing, Zhao, Yuguang
Format:	Artikel
Sprache:	eng
Schlagworte:	Banded structure Dark current Design analysis Detectors Optimization Optoelectronics Photodetectors Wavelengths
Online-Zugang:	Volltext
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