Improvement in n-ZnO/p-Si diode properties using ZnO/AZO homogeneous metal contact
In this study, an n-ZnO/p-Si diode with a ZnO/AZO homogeneous metal contact was fabricated and compared with a ZnO/Al metal contact. AZO films were deposited using atomic layer deposition (ALD). Prior to the device fabrication, the AZO films were optimized in terms of their characteristic as TCO on...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2014-08, Vol.53 (8S3), p.8-1-08NJ03-4 |
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| container_end_page | 1-08NJ03-4 |
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| container_issue | 8S3 |
| container_start_page | 8 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 53 |
| creator | An, Jin Un Yun, Ho Jin Jeong, Kwang Seok Kim, Yu Mi Yang, Seung Dong Kim, Seong Hyeon Kim, Jin Sup Ko, Young Uk Lee, Hi Deok Lee, Ga Won |
| description | In this study, an n-ZnO/p-Si diode with a ZnO/AZO homogeneous metal contact was fabricated and compared with a ZnO/Al metal contact. AZO films were deposited using atomic layer deposition (ALD). Prior to the device fabrication, the AZO films were optimized in terms of their characteristic as TCO on a soda lime glass. Their resistivity is 1.08 × 10−3 Ω·cm and their transmittance is over 80% in the visible light region for a 5% Al doping concentration. The leakage current of ZnO/AZO homogeneous contact diodes is lower than that of ZnO/Al devices. In addition, under thermal stress induced by changing substrate temperature from 300 to 450 K, the contact resistance of the ZnO/AZO structure is more stable than that of the ZnO/Al structure. |
| doi_str_mv | 10.7567/JJAP.53.08NJ03 |
| format | Article |
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AZO films were deposited using atomic layer deposition (ALD). Prior to the device fabrication, the AZO films were optimized in terms of their characteristic as TCO on a soda lime glass. Their resistivity is 1.08 × 10−3 Ω·cm and their transmittance is over 80% in the visible light region for a 5% Al doping concentration. The leakage current of ZnO/AZO homogeneous contact diodes is lower than that of ZnO/Al devices. In addition, under thermal stress induced by changing substrate temperature from 300 to 450 K, the contact resistance of the ZnO/AZO structure is more stable than that of the ZnO/Al structure.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.53.08NJ03</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><subject>Aluminum ; Azo ; Contact ; Deposition ; Devices ; Diodes ; Leakage current ; Transmittance ; Zinc oxide</subject><ispartof>Japanese Journal of Applied Physics, 2014-08, Vol.53 (8S3), p.8-1-08NJ03-4</ispartof><rights>2014 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c307t-20eea09188592ae0eaa501e29bfd04c32a5d3afeecd0a618e1b91eaee8b7f54f3</citedby><cites>FETCH-LOGICAL-c307t-20eea09188592ae0eaa501e29bfd04c32a5d3afeecd0a618e1b91eaee8b7f54f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.53.08NJ03/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27903,27904,53825,53872</link.rule.ids></links><search><creatorcontrib>An, Jin Un</creatorcontrib><creatorcontrib>Yun, Ho Jin</creatorcontrib><creatorcontrib>Jeong, Kwang Seok</creatorcontrib><creatorcontrib>Kim, Yu Mi</creatorcontrib><creatorcontrib>Yang, Seung Dong</creatorcontrib><creatorcontrib>Kim, Seong Hyeon</creatorcontrib><creatorcontrib>Kim, Jin Sup</creatorcontrib><creatorcontrib>Ko, Young Uk</creatorcontrib><creatorcontrib>Lee, Hi Deok</creatorcontrib><creatorcontrib>Lee, Ga Won</creatorcontrib><title>Improvement in n-ZnO/p-Si diode properties using ZnO/AZO homogeneous metal contact</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>In this study, an n-ZnO/p-Si diode with a ZnO/AZO homogeneous metal contact was fabricated and compared with a ZnO/Al metal contact. AZO films were deposited using atomic layer deposition (ALD). Prior to the device fabrication, the AZO films were optimized in terms of their characteristic as TCO on a soda lime glass. Their resistivity is 1.08 × 10−3 Ω·cm and their transmittance is over 80% in the visible light region for a 5% Al doping concentration. The leakage current of ZnO/AZO homogeneous contact diodes is lower than that of ZnO/Al devices. In addition, under thermal stress induced by changing substrate temperature from 300 to 450 K, the contact resistance of the ZnO/AZO structure is more stable than that of the ZnO/Al structure.</description><subject>Aluminum</subject><subject>Azo</subject><subject>Contact</subject><subject>Deposition</subject><subject>Devices</subject><subject>Diodes</subject><subject>Leakage current</subject><subject>Transmittance</subject><subject>Zinc oxide</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp1UMlOwzAUtBBIlMKVs48IyamXOMuxqlhaVRSxXHqx3OSluErsECdI_D0u4crpaTQzTzOD0DWjUSqTdLZazZ8jKSKaPa2oOEETJuKUxDSRp2hCKWckzjk_RxfeHwJMZMwm6GXZtJ37ggZsj43FlmztZtaSV4NL40rAgW2h6w14PHhj9_jIz7cb_OEatwcLbvC4gV7XuHC210V_ic4qXXu4-rtT9H5_97Z4JOvNw3IxX5NC0LQnnAJomrMskznXQEFrSRnwfFeVNC4E17IUugIoSqoTlgHb5Qw0QLZLKxlXYopuxr8h4ucAvleN8QXUtf4NpViSyTQPRXmQRqO06Jz3HVSq7Uyju2_FqDqOp47jKSnUOF4w3I4G41p1cENnQ5P_xD8kpnBn</recordid><startdate>20140801</startdate><enddate>20140801</enddate><creator>An, Jin Un</creator><creator>Yun, Ho Jin</creator><creator>Jeong, Kwang Seok</creator><creator>Kim, Yu Mi</creator><creator>Yang, Seung Dong</creator><creator>Kim, Seong Hyeon</creator><creator>Kim, Jin Sup</creator><creator>Ko, Young Uk</creator><creator>Lee, Hi Deok</creator><creator>Lee, Ga Won</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140801</creationdate><title>Improvement in n-ZnO/p-Si diode properties using ZnO/AZO homogeneous metal contact</title><author>An, Jin Un ; Yun, Ho Jin ; Jeong, Kwang Seok ; Kim, Yu Mi ; Yang, Seung Dong ; Kim, Seong Hyeon ; Kim, Jin Sup ; Ko, Young Uk ; Lee, Hi Deok ; Lee, Ga Won</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c307t-20eea09188592ae0eaa501e29bfd04c32a5d3afeecd0a618e1b91eaee8b7f54f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Aluminum</topic><topic>Azo</topic><topic>Contact</topic><topic>Deposition</topic><topic>Devices</topic><topic>Diodes</topic><topic>Leakage current</topic><topic>Transmittance</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>An, Jin Un</creatorcontrib><creatorcontrib>Yun, Ho Jin</creatorcontrib><creatorcontrib>Jeong, Kwang Seok</creatorcontrib><creatorcontrib>Kim, Yu Mi</creatorcontrib><creatorcontrib>Yang, Seung Dong</creatorcontrib><creatorcontrib>Kim, Seong Hyeon</creatorcontrib><creatorcontrib>Kim, Jin Sup</creatorcontrib><creatorcontrib>Ko, Young Uk</creatorcontrib><creatorcontrib>Lee, Hi Deok</creatorcontrib><creatorcontrib>Lee, Ga Won</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>An, Jin Un</au><au>Yun, Ho Jin</au><au>Jeong, Kwang Seok</au><au>Kim, Yu Mi</au><au>Yang, Seung Dong</au><au>Kim, Seong Hyeon</au><au>Kim, Jin Sup</au><au>Ko, Young Uk</au><au>Lee, Hi Deok</au><au>Lee, Ga Won</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improvement in n-ZnO/p-Si diode properties using ZnO/AZO homogeneous metal contact</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2014-08-01</date><risdate>2014</risdate><volume>53</volume><issue>8S3</issue><spage>8</spage><epage>1-08NJ03-4</epage><pages>8-1-08NJ03-4</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>In this study, an n-ZnO/p-Si diode with a ZnO/AZO homogeneous metal contact was fabricated and compared with a ZnO/Al metal contact. AZO films were deposited using atomic layer deposition (ALD). Prior to the device fabrication, the AZO films were optimized in terms of their characteristic as TCO on a soda lime glass. Their resistivity is 1.08 × 10−3 Ω·cm and their transmittance is over 80% in the visible light region for a 5% Al doping concentration. The leakage current of ZnO/AZO homogeneous contact diodes is lower than that of ZnO/Al devices. In addition, under thermal stress induced by changing substrate temperature from 300 to 450 K, the contact resistance of the ZnO/AZO structure is more stable than that of the ZnO/Al structure.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.53.08NJ03</doi><tpages>4</tpages></addata></record> |
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| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | Institute of Physics Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Aluminum Azo Contact Deposition Devices Diodes Leakage current Transmittance Zinc oxide |
| title | Improvement in n-ZnO/p-Si diode properties using ZnO/AZO homogeneous metal contact |
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