Effect of Fe impurity on the dislocations in 4H-SiC: Insights from electrical and optical characterization

The effect of Fe impurity on the dissociation and motion behavior of basal plane dislocations (BPDs) in 4H-SiC homoepitaxial layers was investigated by electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques. Under the electron-beam irradiation, the BPDs dissociated to C- and Si...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2014-05, Vol.53 (5S1), p.5-1-05FG01-5
Hauptverfasser:	Chen, Bin, Sekiguchi, Takashi, Matsuhata, Hirofumi, Ohyanagi, Takasumi, Kinoshita, Akimasa, Okumura, Hajime
Format:	Artikel
Sprache:	eng
Schlagworte:	Basal plane Cathodoluminescence Cleaning Dislocations Electrical properties Impurities Iron Irradiation Surface chemistry
Online-Zugang:	Volltext
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