Design of process diagnostics for excimer laser irradiation of oxide thin films
The authors have developed an in situ excimer laser irradiation system that can monitor the temperature field of oxide thin films through thermal radiation produced upon a pulsed ultraviolet laser irradiation. Thermal emission signals from a Si single crystal obtained using with this system agreed w...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 2014-05, Vol.53 (5S1), p.5-1-05FB08-6 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1-05FB08-6 |
|---|---|
| container_issue | 5S1 |
| container_start_page | 5 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 53 |
| creator | Shinoda, Kentaro Nakajima, Tomohiko Hatano, Mutsuko Tsuchiya, Tetsuo |
| description | The authors have developed an in situ excimer laser irradiation system that can monitor the temperature field of oxide thin films through thermal radiation produced upon a pulsed ultraviolet laser irradiation. Thermal emission signals from a Si single crystal obtained using with this system agreed well with a numerical simulation result, validating the time constant of the measurement system. The time-dependent transient temperature profile of tin-doped indium oxide thin films, which was converted from thermal emission signals, clearly showed a recalescence behavior in its cooling curve. The transmittance data of the laser-irradiated indium oxide thin films suggested that the transmittance monitoring at near-infrared and ultraviolet-visible regions could be useful in monitoring the dopant levels and laser processing conditions, respectively. |
| doi_str_mv | 10.7567/JJAP.53.05FB08 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_7567_JJAP_53_05FB08</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1685789947</sourcerecordid><originalsourceid>FETCH-LOGICAL-c452t-ef45d30f9f1f79482cb5d046936b3ec695343b1bd9f1598d8e94d787739c78263</originalsourceid><addsrcrecordid>eNp1kN1LwzAUxYMoOKevPvdRhNak-X6c06ljMEF9Dm2azJSuqUkH87-3s3vdy71c-J3DPQeAWwQzThl_WC5n7xnFGaSLRyjOwARhwlMCGT0HEwhzlBKZ55fgKsZ6OBklaALWTya6TZt4m3TBaxNjUrli0_rYOx0T60Ni9tptTUiaIg7ThVAMRO_8v8jvXWWS_tu1iXXNNl6DC1s00dwc9xR8LZ4_56_pav3yNp-tUk1o3qfGElphaKVFlksicl3SChImMSux0UxSTHCJymoAqBSVMJJUXHCOpeYiZ3gK7kbf4eufnYm92rqoTdMUrfG7qBATlAspCR_QbER18DEGY1UX3LYIvwpBdWhOHZpTFKuxuUFwPwqc71Ttd6Edkqi6LroDRD_QEVRdZU_AJ5z_AEA1fHw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1685789947</pqid></control><display><type>article</type><title>Design of process diagnostics for excimer laser irradiation of oxide thin films</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Shinoda, Kentaro ; Nakajima, Tomohiko ; Hatano, Mutsuko ; Tsuchiya, Tetsuo</creator><creatorcontrib>Shinoda, Kentaro ; Nakajima, Tomohiko ; Hatano, Mutsuko ; Tsuchiya, Tetsuo</creatorcontrib><description>The authors have developed an in situ excimer laser irradiation system that can monitor the temperature field of oxide thin films through thermal radiation produced upon a pulsed ultraviolet laser irradiation. Thermal emission signals from a Si single crystal obtained using with this system agreed well with a numerical simulation result, validating the time constant of the measurement system. The time-dependent transient temperature profile of tin-doped indium oxide thin films, which was converted from thermal emission signals, clearly showed a recalescence behavior in its cooling curve. The transmittance data of the laser-irradiated indium oxide thin films suggested that the transmittance monitoring at near-infrared and ultraviolet-visible regions could be useful in monitoring the dopant levels and laser processing conditions, respectively.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.53.05FB08</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><subject>Excimer lasers ; Indium oxides ; Irradiation ; Monitoring ; Monitors ; Oxides ; Thermal emission ; Thin films ; Transmittance</subject><ispartof>Japanese Journal of Applied Physics, 2014-05, Vol.53 (5S1), p.5-1-05FB08-6</ispartof><rights>2014 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c452t-ef45d30f9f1f79482cb5d046936b3ec695343b1bd9f1598d8e94d787739c78263</citedby><cites>FETCH-LOGICAL-c452t-ef45d30f9f1f79482cb5d046936b3ec695343b1bd9f1598d8e94d787739c78263</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.53.05FB08/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>315,781,785,27929,27930,53851,53898</link.rule.ids></links><search><creatorcontrib>Shinoda, Kentaro</creatorcontrib><creatorcontrib>Nakajima, Tomohiko</creatorcontrib><creatorcontrib>Hatano, Mutsuko</creatorcontrib><creatorcontrib>Tsuchiya, Tetsuo</creatorcontrib><title>Design of process diagnostics for excimer laser irradiation of oxide thin films</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>The authors have developed an in situ excimer laser irradiation system that can monitor the temperature field of oxide thin films through thermal radiation produced upon a pulsed ultraviolet laser irradiation. Thermal emission signals from a Si single crystal obtained using with this system agreed well with a numerical simulation result, validating the time constant of the measurement system. The time-dependent transient temperature profile of tin-doped indium oxide thin films, which was converted from thermal emission signals, clearly showed a recalescence behavior in its cooling curve. The transmittance data of the laser-irradiated indium oxide thin films suggested that the transmittance monitoring at near-infrared and ultraviolet-visible regions could be useful in monitoring the dopant levels and laser processing conditions, respectively.</description><subject>Excimer lasers</subject><subject>Indium oxides</subject><subject>Irradiation</subject><subject>Monitoring</subject><subject>Monitors</subject><subject>Oxides</subject><subject>Thermal emission</subject><subject>Thin films</subject><subject>Transmittance</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp1kN1LwzAUxYMoOKevPvdRhNak-X6c06ljMEF9Dm2azJSuqUkH87-3s3vdy71c-J3DPQeAWwQzThl_WC5n7xnFGaSLRyjOwARhwlMCGT0HEwhzlBKZ55fgKsZ6OBklaALWTya6TZt4m3TBaxNjUrli0_rYOx0T60Ni9tptTUiaIg7ThVAMRO_8v8jvXWWS_tu1iXXNNl6DC1s00dwc9xR8LZ4_56_pav3yNp-tUk1o3qfGElphaKVFlksicl3SChImMSux0UxSTHCJymoAqBSVMJJUXHCOpeYiZ3gK7kbf4eufnYm92rqoTdMUrfG7qBATlAspCR_QbER18DEGY1UX3LYIvwpBdWhOHZpTFKuxuUFwPwqc71Ttd6Edkqi6LroDRD_QEVRdZU_AJ5z_AEA1fHw</recordid><startdate>20140501</startdate><enddate>20140501</enddate><creator>Shinoda, Kentaro</creator><creator>Nakajima, Tomohiko</creator><creator>Hatano, Mutsuko</creator><creator>Tsuchiya, Tetsuo</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140501</creationdate><title>Design of process diagnostics for excimer laser irradiation of oxide thin films</title><author>Shinoda, Kentaro ; Nakajima, Tomohiko ; Hatano, Mutsuko ; Tsuchiya, Tetsuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c452t-ef45d30f9f1f79482cb5d046936b3ec695343b1bd9f1598d8e94d787739c78263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Excimer lasers</topic><topic>Indium oxides</topic><topic>Irradiation</topic><topic>Monitoring</topic><topic>Monitors</topic><topic>Oxides</topic><topic>Thermal emission</topic><topic>Thin films</topic><topic>Transmittance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shinoda, Kentaro</creatorcontrib><creatorcontrib>Nakajima, Tomohiko</creatorcontrib><creatorcontrib>Hatano, Mutsuko</creatorcontrib><creatorcontrib>Tsuchiya, Tetsuo</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shinoda, Kentaro</au><au>Nakajima, Tomohiko</au><au>Hatano, Mutsuko</au><au>Tsuchiya, Tetsuo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design of process diagnostics for excimer laser irradiation of oxide thin films</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2014-05-01</date><risdate>2014</risdate><volume>53</volume><issue>5S1</issue><spage>5</spage><epage>1-05FB08-6</epage><pages>5-1-05FB08-6</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>The authors have developed an in situ excimer laser irradiation system that can monitor the temperature field of oxide thin films through thermal radiation produced upon a pulsed ultraviolet laser irradiation. Thermal emission signals from a Si single crystal obtained using with this system agreed well with a numerical simulation result, validating the time constant of the measurement system. The time-dependent transient temperature profile of tin-doped indium oxide thin films, which was converted from thermal emission signals, clearly showed a recalescence behavior in its cooling curve. The transmittance data of the laser-irradiated indium oxide thin films suggested that the transmittance monitoring at near-infrared and ultraviolet-visible regions could be useful in monitoring the dopant levels and laser processing conditions, respectively.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.53.05FB08</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2014-05, Vol.53 (5S1), p.5-1-05FB08-6 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_7567_JJAP_53_05FB08 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Excimer lasers Indium oxides Irradiation Monitoring Monitors Oxides Thermal emission Thin films Transmittance |
| title | Design of process diagnostics for excimer laser irradiation of oxide thin films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-14T20%3A37%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Design%20of%20process%20diagnostics%20for%20excimer%20laser%20irradiation%20of%20oxide%20thin%20films&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Shinoda,%20Kentaro&rft.date=2014-05-01&rft.volume=53&rft.issue=5S1&rft.spage=5&rft.epage=1-05FB08-6&rft.pages=5-1-05FB08-6&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPB6&rft_id=info:doi/10.7567/JJAP.53.05FB08&rft_dat=%3Cproquest_cross%3E1685789947%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1685789947&rft_id=info:pmid/&rfr_iscdi=true |