Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

We report on the fabrication and characterization of Au-free Ti/Al/TiN-based ohmic contacts on 200 mm AlGaN/GaN epilayers for power devices. Materials and processing used are fully compatible for integration of GaN-based devices in a Si platform. Contact resistance values as low as 0.62 Ω·mm were me...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2014-04, Vol.53 (4S), p.4
Hauptverfasser: Firrincieli, Andrea, De Jaeger, Brice, You, Shuzhen, Wellekens, Dirk, Van Hove, Marleen, Decoutere, Stefaan
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report on the fabrication and characterization of Au-free Ti/Al/TiN-based ohmic contacts on 200 mm AlGaN/GaN epilayers for power devices. Materials and processing used are fully compatible for integration of GaN-based devices in a Si platform. Contact resistance values as low as 0.62 Ω·mm were measured for an optimum alloy temperature as low as 550 °C.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.04EF01