2.86 µm room-temperature light emission of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates
Room-temperature light emission at a wavelength of 2.86 µm was observed for In0.53Ga0.47As0.99N0.01/GaAs0.5Sb0.5 type-II quantum well (QW) diodes grown on InP substrates by molecular beam epitaxy (MBE), which is much longer than that (2.34 µm) for In0.53Ga0.47As/GaAs0.5Sb0.5 type-II QW diodes on InP...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2014-01, Vol.53 (2), p.28004 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Room-temperature light emission at a wavelength of 2.86 µm was observed for In0.53Ga0.47As0.99N0.01/GaAs0.5Sb0.5 type-II quantum well (QW) diodes grown on InP substrates by molecular beam epitaxy (MBE), which is much longer than that (2.34 µm) for In0.53Ga0.47As/GaAs0.5Sb0.5 type-II QW diodes on InP substrates. The temperature dependence of the electroluminescence (EL) spectrum indicates that the EL peak energy difference between these two diodes is 100 meV at all temperatures. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.7567/JJAP.53.028004 |