Switching Model of TaO x -Based Nonpolar Resistive Random Access Memory

We report on a novel TaO x -based nonpolar resistive random access memory (RRAM) cell design with a Cr/TaO x /Al (top-to-bottom) structure. Extensive studies of the switching mechanism of the nonpolar RRAM were performed. The thermal coefficient of resistance of the RRAM in the low-resistance state...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2013-04, Vol.52 (4S), p.4
Hauptverfasser:	Tong, Xin, Wu, Wenjuan, Liu, Zhe, Tran, Xuan Anh, Yu, Hong Yu, Yeo, Yee-Chia
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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