Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS 2 -Based Conductive Bridge Memories

In this paper, the effect of the active layer thickness and temperature on the switching kinetics of GeS 2 -based conductive bridge memories is addressed through electrical characterization. Results are explained in terms of a thermally and field driven ion hopping model for reversible resistance sw...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2013-04, Vol.52 (4S), p.4
Hauptverfasser:	Palma, Giorgio, Vianello, Elisa, Molas, Gabriel, Cagli, Carlo, Longnos, Florian, Guy, Jérémy, Reyboz, Marina, Carabasse, Catherine, Bernard, Mathieu, Dahmani, Faiz, Bretegnier, Damien, Liebault, Jacques, Salvo, Barbara De
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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