Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS 2 -Based Conductive Bridge Memories
In this paper, the effect of the active layer thickness and temperature on the switching kinetics of GeS 2 -based conductive bridge memories is addressed through electrical characterization. Results are explained in terms of a thermally and field driven ion hopping model for reversible resistance sw...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2013-04, Vol.52 (4S), p.4 |
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container_title | Japanese Journal of Applied Physics |
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creator | Palma, Giorgio Vianello, Elisa Molas, Gabriel Cagli, Carlo Longnos, Florian Guy, Jérémy Reyboz, Marina Carabasse, Catherine Bernard, Mathieu Dahmani, Faiz Bretegnier, Damien Liebault, Jacques Salvo, Barbara De |
description | In this paper, the effect of the active layer thickness and temperature on the switching kinetics of GeS
2
-based conductive bridge memories is addressed through electrical characterization. Results are explained in terms of a thermally and field driven ion hopping model for reversible resistance switching. The combined analysis reveals that at high temperature the set voltage and the set resistance decrease. Furthermore, the study suggests that applying the same reset condition, for GeS
2
thicknesses lower than 50 nm, the conductive filament is almost dissolved, while for thicker layers a portion of the filament still remains. |
doi_str_mv | 10.7567/JJAP.52.04CD02 |
format | Article |
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2
-based conductive bridge memories is addressed through electrical characterization. Results are explained in terms of a thermally and field driven ion hopping model for reversible resistance switching. The combined analysis reveals that at high temperature the set voltage and the set resistance decrease. Furthermore, the study suggests that applying the same reset condition, for GeS
2
thicknesses lower than 50 nm, the conductive filament is almost dissolved, while for thicker layers a portion of the filament still remains.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.52.04CD02</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2013-04, Vol.52 (4S), p.4</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c842-427a969dd10b195e9fb463073c810df179bd90377fdb8ccd5bd74c05f6eb53e3</citedby><cites>FETCH-LOGICAL-c842-427a969dd10b195e9fb463073c810df179bd90377fdb8ccd5bd74c05f6eb53e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Palma, Giorgio</creatorcontrib><creatorcontrib>Vianello, Elisa</creatorcontrib><creatorcontrib>Molas, Gabriel</creatorcontrib><creatorcontrib>Cagli, Carlo</creatorcontrib><creatorcontrib>Longnos, Florian</creatorcontrib><creatorcontrib>Guy, Jérémy</creatorcontrib><creatorcontrib>Reyboz, Marina</creatorcontrib><creatorcontrib>Carabasse, Catherine</creatorcontrib><creatorcontrib>Bernard, Mathieu</creatorcontrib><creatorcontrib>Dahmani, Faiz</creatorcontrib><creatorcontrib>Bretegnier, Damien</creatorcontrib><creatorcontrib>Liebault, Jacques</creatorcontrib><creatorcontrib>Salvo, Barbara De</creatorcontrib><title>Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS 2 -Based Conductive Bridge Memories</title><title>Japanese Journal of Applied Physics</title><description>In this paper, the effect of the active layer thickness and temperature on the switching kinetics of GeS
2
-based conductive bridge memories is addressed through electrical characterization. Results are explained in terms of a thermally and field driven ion hopping model for reversible resistance switching. The combined analysis reveals that at high temperature the set voltage and the set resistance decrease. Furthermore, the study suggests that applying the same reset condition, for GeS
2
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2
-based conductive bridge memories is addressed through electrical characterization. Results are explained in terms of a thermally and field driven ion hopping model for reversible resistance switching. The combined analysis reveals that at high temperature the set voltage and the set resistance decrease. Furthermore, the study suggests that applying the same reset condition, for GeS
2
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title | Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS 2 -Based Conductive Bridge Memories |
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