Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS 2 -Based Conductive Bridge Memories

In this paper, the effect of the active layer thickness and temperature on the switching kinetics of GeS 2 -based conductive bridge memories is addressed through electrical characterization. Results are explained in terms of a thermally and field driven ion hopping model for reversible resistance sw...

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Veröffentlicht in:Japanese Journal of Applied Physics 2013-04, Vol.52 (4S), p.4
Hauptverfasser: Palma, Giorgio, Vianello, Elisa, Molas, Gabriel, Cagli, Carlo, Longnos, Florian, Guy, Jérémy, Reyboz, Marina, Carabasse, Catherine, Bernard, Mathieu, Dahmani, Faiz, Bretegnier, Damien, Liebault, Jacques, Salvo, Barbara De
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container_issue 4S
container_start_page 4
container_title Japanese Journal of Applied Physics
container_volume 52
creator Palma, Giorgio
Vianello, Elisa
Molas, Gabriel
Cagli, Carlo
Longnos, Florian
Guy, Jérémy
Reyboz, Marina
Carabasse, Catherine
Bernard, Mathieu
Dahmani, Faiz
Bretegnier, Damien
Liebault, Jacques
Salvo, Barbara De
description In this paper, the effect of the active layer thickness and temperature on the switching kinetics of GeS 2 -based conductive bridge memories is addressed through electrical characterization. Results are explained in terms of a thermally and field driven ion hopping model for reversible resistance switching. The combined analysis reveals that at high temperature the set voltage and the set resistance decrease. Furthermore, the study suggests that applying the same reset condition, for GeS 2 thicknesses lower than 50 nm, the conductive filament is almost dissolved, while for thicker layers a portion of the filament still remains.
doi_str_mv 10.7567/JJAP.52.04CD02
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_7567_JJAP_52_04CD02</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_7567_JJAP_52_04CD02</sourcerecordid><originalsourceid>FETCH-LOGICAL-c842-427a969dd10b195e9fb463073c810df179bd90377fdb8ccd5bd74c05f6eb53e3</originalsourceid><addsrcrecordid>eNotkE9PwjAchhujiYhePfcLbPbvSo8wEUWMJtt96dpfoSobaYeGb6-IpzdP8uY5PAjdUpIrWai75XL6lkuWE1HeE3aGRpQLlQlSyHM0IoTRTGjGLtFVSu-_WEhBR-gw9x7sgHuPhw3gqR3CF-CVOUDE9SbYjw5SwqZzuIbtDqIZ9hFw3_29q-8w2E3o1vg5dDAEm46eBVSY4WxmEjhc9p3bn6SzGNwa8Ats-xggXaMLbz4T3PzvGFUP87p8zFavi6dyusrsRLBMMGV0oZ2jpKVagvatKDhR3E4ocZ4q3TpNuFLetRNrnWydEpZIX0ArOfAxyk9WG_uUIvhmF8PWxENDSXPM1hyzNZI1p2z8B7xyYPQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS 2 -Based Conductive Bridge Memories</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Palma, Giorgio ; Vianello, Elisa ; Molas, Gabriel ; Cagli, Carlo ; Longnos, Florian ; Guy, Jérémy ; Reyboz, Marina ; Carabasse, Catherine ; Bernard, Mathieu ; Dahmani, Faiz ; Bretegnier, Damien ; Liebault, Jacques ; Salvo, Barbara De</creator><creatorcontrib>Palma, Giorgio ; Vianello, Elisa ; Molas, Gabriel ; Cagli, Carlo ; Longnos, Florian ; Guy, Jérémy ; Reyboz, Marina ; Carabasse, Catherine ; Bernard, Mathieu ; Dahmani, Faiz ; Bretegnier, Damien ; Liebault, Jacques ; Salvo, Barbara De</creatorcontrib><description>In this paper, the effect of the active layer thickness and temperature on the switching kinetics of GeS 2 -based conductive bridge memories is addressed through electrical characterization. Results are explained in terms of a thermally and field driven ion hopping model for reversible resistance switching. The combined analysis reveals that at high temperature the set voltage and the set resistance decrease. Furthermore, the study suggests that applying the same reset condition, for GeS 2 thicknesses lower than 50 nm, the conductive filament is almost dissolved, while for thicker layers a portion of the filament still remains.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.52.04CD02</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2013-04, Vol.52 (4S), p.4</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c842-427a969dd10b195e9fb463073c810df179bd90377fdb8ccd5bd74c05f6eb53e3</citedby><cites>FETCH-LOGICAL-c842-427a969dd10b195e9fb463073c810df179bd90377fdb8ccd5bd74c05f6eb53e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Palma, Giorgio</creatorcontrib><creatorcontrib>Vianello, Elisa</creatorcontrib><creatorcontrib>Molas, Gabriel</creatorcontrib><creatorcontrib>Cagli, Carlo</creatorcontrib><creatorcontrib>Longnos, Florian</creatorcontrib><creatorcontrib>Guy, Jérémy</creatorcontrib><creatorcontrib>Reyboz, Marina</creatorcontrib><creatorcontrib>Carabasse, Catherine</creatorcontrib><creatorcontrib>Bernard, Mathieu</creatorcontrib><creatorcontrib>Dahmani, Faiz</creatorcontrib><creatorcontrib>Bretegnier, Damien</creatorcontrib><creatorcontrib>Liebault, Jacques</creatorcontrib><creatorcontrib>Salvo, Barbara De</creatorcontrib><title>Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS 2 -Based Conductive Bridge Memories</title><title>Japanese Journal of Applied Physics</title><description>In this paper, the effect of the active layer thickness and temperature on the switching kinetics of GeS 2 -based conductive bridge memories is addressed through electrical characterization. Results are explained in terms of a thermally and field driven ion hopping model for reversible resistance switching. The combined analysis reveals that at high temperature the set voltage and the set resistance decrease. Furthermore, the study suggests that applying the same reset condition, for GeS 2 thicknesses lower than 50 nm, the conductive filament is almost dissolved, while for thicker layers a portion of the filament still remains.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotkE9PwjAchhujiYhePfcLbPbvSo8wEUWMJtt96dpfoSobaYeGb6-IpzdP8uY5PAjdUpIrWai75XL6lkuWE1HeE3aGRpQLlQlSyHM0IoTRTGjGLtFVSu-_WEhBR-gw9x7sgHuPhw3gqR3CF-CVOUDE9SbYjw5SwqZzuIbtDqIZ9hFw3_29q-8w2E3o1vg5dDAEm46eBVSY4WxmEjhc9p3bn6SzGNwa8Ats-xggXaMLbz4T3PzvGFUP87p8zFavi6dyusrsRLBMMGV0oZ2jpKVagvatKDhR3E4ocZ4q3TpNuFLetRNrnWydEpZIX0ArOfAxyk9WG_uUIvhmF8PWxENDSXPM1hyzNZI1p2z8B7xyYPQ</recordid><startdate>20130401</startdate><enddate>20130401</enddate><creator>Palma, Giorgio</creator><creator>Vianello, Elisa</creator><creator>Molas, Gabriel</creator><creator>Cagli, Carlo</creator><creator>Longnos, Florian</creator><creator>Guy, Jérémy</creator><creator>Reyboz, Marina</creator><creator>Carabasse, Catherine</creator><creator>Bernard, Mathieu</creator><creator>Dahmani, Faiz</creator><creator>Bretegnier, Damien</creator><creator>Liebault, Jacques</creator><creator>Salvo, Barbara De</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130401</creationdate><title>Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS 2 -Based Conductive Bridge Memories</title><author>Palma, Giorgio ; Vianello, Elisa ; Molas, Gabriel ; Cagli, Carlo ; Longnos, Florian ; Guy, Jérémy ; Reyboz, Marina ; Carabasse, Catherine ; Bernard, Mathieu ; Dahmani, Faiz ; Bretegnier, Damien ; Liebault, Jacques ; Salvo, Barbara De</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c842-427a969dd10b195e9fb463073c810df179bd90377fdb8ccd5bd74c05f6eb53e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Palma, Giorgio</creatorcontrib><creatorcontrib>Vianello, Elisa</creatorcontrib><creatorcontrib>Molas, Gabriel</creatorcontrib><creatorcontrib>Cagli, Carlo</creatorcontrib><creatorcontrib>Longnos, Florian</creatorcontrib><creatorcontrib>Guy, Jérémy</creatorcontrib><creatorcontrib>Reyboz, Marina</creatorcontrib><creatorcontrib>Carabasse, Catherine</creatorcontrib><creatorcontrib>Bernard, Mathieu</creatorcontrib><creatorcontrib>Dahmani, Faiz</creatorcontrib><creatorcontrib>Bretegnier, Damien</creatorcontrib><creatorcontrib>Liebault, Jacques</creatorcontrib><creatorcontrib>Salvo, Barbara De</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Palma, Giorgio</au><au>Vianello, Elisa</au><au>Molas, Gabriel</au><au>Cagli, Carlo</au><au>Longnos, Florian</au><au>Guy, Jérémy</au><au>Reyboz, Marina</au><au>Carabasse, Catherine</au><au>Bernard, Mathieu</au><au>Dahmani, Faiz</au><au>Bretegnier, Damien</au><au>Liebault, Jacques</au><au>Salvo, Barbara De</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS 2 -Based Conductive Bridge Memories</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2013-04-01</date><risdate>2013</risdate><volume>52</volume><issue>4S</issue><spage>4</spage><pages>4-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>In this paper, the effect of the active layer thickness and temperature on the switching kinetics of GeS 2 -based conductive bridge memories is addressed through electrical characterization. Results are explained in terms of a thermally and field driven ion hopping model for reversible resistance switching. The combined analysis reveals that at high temperature the set voltage and the set resistance decrease. Furthermore, the study suggests that applying the same reset condition, for GeS 2 thicknesses lower than 50 nm, the conductive filament is almost dissolved, while for thicker layers a portion of the filament still remains.</abstract><doi>10.7567/JJAP.52.04CD02</doi></addata></record>
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title Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS 2 -Based Conductive Bridge Memories
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-20T04%3A15%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20the%20Active%20Layer%20Thickness%20and%20Temperature%20on%20the%20Switching%20Kinetics%20of%20GeS%202%20-Based%20Conductive%20Bridge%20Memories&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Palma,%20Giorgio&rft.date=2013-04-01&rft.volume=52&rft.issue=4S&rft.spage=4&rft.pages=4-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.7567/JJAP.52.04CD02&rft_dat=%3Ccrossref%3E10_7567_JJAP_52_04CD02%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true