Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks

Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks

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Veröffentlicht in:Japanese Journal of Applied Physics 2012-04, Vol.51 (4R), p.41105
Hauptverfasser: Hirano, Izumi, Yamaguchi, Takeshi, Nakasaki, Yasushi, Iijima, Ryosuke, Sekine, Katsuyuki, Takayanagi, Mariko, Eguchi, Kazuhiro, Mitani, Yuichiro
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Sprache:eng ; jpn
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container_end_page
container_issue 4R
container_start_page 41105
container_title Japanese Journal of Applied Physics
container_volume 51
creator Hirano, Izumi
Yamaguchi, Takeshi
Nakasaki, Yasushi
Iijima, Ryosuke
Sekine, Katsuyuki
Takayanagi, Mariko
Eguchi, Kazuhiro
Mitani, Yuichiro
description
doi_str_mv 10.7567/JJAP.51.041105
format Article
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ispartof Japanese Journal of Applied Physics, 2012-04, Vol.51 (4R), p.41105
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
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