Study on the Effects of Zr-Incorporated InZnO Thin-Film Transistors Using a Solution Process

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Veröffentlicht in:	Japanese Journal of Applied Physics 2011-07, Vol.50 (7R), p.70202
Hauptverfasser:	Jeong, Tae Hoon, Kim, Si Joon, Yoon, Doo Hyun, Jeong, Woong Hee, Kim, Dong Lim, Lim, Hyun Soo, Kim, Hyun Jae
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Sprache:	eng ; jpn
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title	Study on the Effects of Zr-Incorporated InZnO Thin-Film Transistors Using a Solution Process
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