High-Voltage Schottky Barrier Diode on Silicon Substrate

High-Voltage Schottky Barrier Diode on Silicon Substrate

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2011-06, Vol.50 (6S), p.6
Hauptverfasser: Ha, Min-Woo, Roh, Cheong Hyun, Hwang, Dae Won, Choi, Hong Goo, Song, Hong Joo, Lee, Jun Ho, Park, Jung Ho, Seok, Ogyun, Lim, Jiyong, Han, Min-Koo, Hahn, Cheol-Koo
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 6S
container_start_page 6
container_title Japanese Journal of Applied Physics
container_volume 50
creator Ha, Min-Woo
Roh, Cheong Hyun
Hwang, Dae Won
Choi, Hong Goo
Song, Hong Joo
Lee, Jun Ho
Park, Jung Ho
Seok, Ogyun
Lim, Jiyong
Han, Min-Koo
Hahn, Cheol-Koo
description
doi_str_mv 10.7567/JJAP.50.06GF17
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_7567_JJAP_50_06GF17</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_7567_JJAP_50_06GF17</sourcerecordid><originalsourceid>FETCH-LOGICAL-c847-22d5d728946fbb60cf78c659d3942a46dd0d5e3e74f999994c60e0069a0438363</originalsourceid><addsrcrecordid>eNotj8tOwzAURC0EEqWwZZ0fSLh-XcfLUmhLVQmkVmwtx3ZaQyDIDov-PY3KbI5mM6NDyD2FSklUD-v17K2SUAEuF1RdkAnlQpUCUF6SCQCjpdCMXZObnD9OFaWgE1Kv4v5QvvfdYPeh2LpDPwyfx-LRphRDKp5i70PRfxfb2EU38rfJQ7JDuCVXre1yuPvnlOwWz7v5qty8Ll_ms03p6tM7Y156xWotsG0aBNeq2qHUnmvBrEDvwcvAgxKtHiMcQgBAbUHwmiOfkuo861Kfcwqt-Unxy6ajoWBGbTNqGwnmrM3_AGThSYY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High-Voltage Schottky Barrier Diode on Silicon Substrate</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Ha, Min-Woo ; Roh, Cheong Hyun ; Hwang, Dae Won ; Choi, Hong Goo ; Song, Hong Joo ; Lee, Jun Ho ; Park, Jung Ho ; Seok, Ogyun ; Lim, Jiyong ; Han, Min-Koo ; Hahn, Cheol-Koo</creator><creatorcontrib>Ha, Min-Woo ; Roh, Cheong Hyun ; Hwang, Dae Won ; Choi, Hong Goo ; Song, Hong Joo ; Lee, Jun Ho ; Park, Jung Ho ; Seok, Ogyun ; Lim, Jiyong ; Han, Min-Koo ; Hahn, Cheol-Koo</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.50.06GF17</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2011-06, Vol.50 (6S), p.6</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c847-22d5d728946fbb60cf78c659d3942a46dd0d5e3e74f999994c60e0069a0438363</citedby><cites>FETCH-LOGICAL-c847-22d5d728946fbb60cf78c659d3942a46dd0d5e3e74f999994c60e0069a0438363</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Ha, Min-Woo</creatorcontrib><creatorcontrib>Roh, Cheong Hyun</creatorcontrib><creatorcontrib>Hwang, Dae Won</creatorcontrib><creatorcontrib>Choi, Hong Goo</creatorcontrib><creatorcontrib>Song, Hong Joo</creatorcontrib><creatorcontrib>Lee, Jun Ho</creatorcontrib><creatorcontrib>Park, Jung Ho</creatorcontrib><creatorcontrib>Seok, Ogyun</creatorcontrib><creatorcontrib>Lim, Jiyong</creatorcontrib><creatorcontrib>Han, Min-Koo</creatorcontrib><creatorcontrib>Hahn, Cheol-Koo</creatorcontrib><title>High-Voltage Schottky Barrier Diode on Silicon Substrate</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNotj8tOwzAURC0EEqWwZZ0fSLh-XcfLUmhLVQmkVmwtx3ZaQyDIDov-PY3KbI5mM6NDyD2FSklUD-v17K2SUAEuF1RdkAnlQpUCUF6SCQCjpdCMXZObnD9OFaWgE1Kv4v5QvvfdYPeh2LpDPwyfx-LRphRDKp5i70PRfxfb2EU38rfJQ7JDuCVXre1yuPvnlOwWz7v5qty8Ll_ms03p6tM7Y156xWotsG0aBNeq2qHUnmvBrEDvwcvAgxKtHiMcQgBAbUHwmiOfkuo861Kfcwqt-Unxy6ajoWBGbTNqGwnmrM3_AGThSYY</recordid><startdate>20110601</startdate><enddate>20110601</enddate><creator>Ha, Min-Woo</creator><creator>Roh, Cheong Hyun</creator><creator>Hwang, Dae Won</creator><creator>Choi, Hong Goo</creator><creator>Song, Hong Joo</creator><creator>Lee, Jun Ho</creator><creator>Park, Jung Ho</creator><creator>Seok, Ogyun</creator><creator>Lim, Jiyong</creator><creator>Han, Min-Koo</creator><creator>Hahn, Cheol-Koo</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110601</creationdate><title>High-Voltage Schottky Barrier Diode on Silicon Substrate</title><author>Ha, Min-Woo ; Roh, Cheong Hyun ; Hwang, Dae Won ; Choi, Hong Goo ; Song, Hong Joo ; Lee, Jun Ho ; Park, Jung Ho ; Seok, Ogyun ; Lim, Jiyong ; Han, Min-Koo ; Hahn, Cheol-Koo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c847-22d5d728946fbb60cf78c659d3942a46dd0d5e3e74f999994c60e0069a0438363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ha, Min-Woo</creatorcontrib><creatorcontrib>Roh, Cheong Hyun</creatorcontrib><creatorcontrib>Hwang, Dae Won</creatorcontrib><creatorcontrib>Choi, Hong Goo</creatorcontrib><creatorcontrib>Song, Hong Joo</creatorcontrib><creatorcontrib>Lee, Jun Ho</creatorcontrib><creatorcontrib>Park, Jung Ho</creatorcontrib><creatorcontrib>Seok, Ogyun</creatorcontrib><creatorcontrib>Lim, Jiyong</creatorcontrib><creatorcontrib>Han, Min-Koo</creatorcontrib><creatorcontrib>Hahn, Cheol-Koo</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ha, Min-Woo</au><au>Roh, Cheong Hyun</au><au>Hwang, Dae Won</au><au>Choi, Hong Goo</au><au>Song, Hong Joo</au><au>Lee, Jun Ho</au><au>Park, Jung Ho</au><au>Seok, Ogyun</au><au>Lim, Jiyong</au><au>Han, Min-Koo</au><au>Hahn, Cheol-Koo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Voltage Schottky Barrier Diode on Silicon Substrate</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2011-06-01</date><risdate>2011</risdate><volume>50</volume><issue>6S</issue><spage>6</spage><pages>6-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.7567/JJAP.50.06GF17</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 2011-06, Vol.50 (6S), p.6
issn 0021-4922
1347-4065
language eng
recordid cdi_crossref_primary_10_7567_JJAP_50_06GF17
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title High-Voltage Schottky Barrier Diode on Silicon Substrate
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T02%3A43%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-Voltage%20Schottky%20Barrier%20Diode%20on%20Silicon%20Substrate&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Ha,%20Min-Woo&rft.date=2011-06-01&rft.volume=50&rft.issue=6S&rft.spage=6&rft.pages=6-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.7567/JJAP.50.06GF17&rft_dat=%3Ccrossref%3E10_7567_JJAP_50_06GF17%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true