Characterization of Unpassivated-Solution-Processed Zinc–Tin Oxide Thin Film Transistors
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2011-01, Vol.50 (1S2), p.1 |
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| Format: | Artikel |
| Sprache: | eng ; jpn |
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| container_issue | 1S2 |
| container_start_page | 1 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 50 |
| creator | Avis, Christophe Jang, Jin |
| description | |
| doi_str_mv | 10.7567/JJAP.50.01BG03 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2011-01, Vol.50 (1S2), p.1 |
| issn | 0021-4922 1347-4065 |
| language | eng ; jpn |
| recordid | cdi_crossref_primary_10_7567_JJAP_50_01BG03 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Characterization of Unpassivated-Solution-Processed Zinc–Tin Oxide Thin Film Transistors |
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