Deep Levels and Space Charge Distribution in Cu(In,Ga)Se 2 Photovoltaic Devices
ZnO/CdS/Cu(In,Ga)Se 2 photovoltaic devices have been investigated at low temperatures after the samples have been subjected to various forward and reverse biases or illumination at room temperature and during cool-down. The C-V characteristics has been measured and interpreted as distorted by a char...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2000-01, Vol.39 (S1), p.426 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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