Deep Levels and Space Charge Distribution in Cu(In,Ga)Se 2 Photovoltaic Devices

Deep Levels and Space Charge Distribution in Cu(In,Ga)Se 2 Photovoltaic Devices

ZnO/CdS/Cu(In,Ga)Se 2 photovoltaic devices have been investigated at low temperatures after the samples have been subjected to various forward and reverse biases or illumination at room temperature and during cool-down. The C-V characteristics has been measured and interpreted as distorted by a char...

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Veröffentlicht in:Japanese Journal of Applied Physics 2000-01, Vol.39 (S1), p.426
Hauptverfasser: Igalson, Małgorzata, Stolt, Lars
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Stolt, Lars
description ZnO/CdS/Cu(In,Ga)Se 2 photovoltaic devices have been investigated at low temperatures after the samples have been subjected to various forward and reverse biases or illumination at room temperature and during cool-down. The C-V characteristics has been measured and interpreted as distorted by a charge captured in more than 2-10 22 m -3 of deep traps. Subsequent illumination by use of red and blue light reveals very high concentration of midgap centers in the 10-20 nm layer of absorber close to the heterointerface. Their presence might be a source of efficiency losses previously attributed to the defects in CdS.
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title Deep Levels and Space Charge Distribution in Cu(In,Ga)Se 2 Photovoltaic Devices
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