Electrooptical Properties of InGaAs/GaAs Strained Single Quantum Wells

The electrooptical properties of (100) and (111)B InGaAs/GaAs strained single quantum wells have been studied by the photoreflectance spectroscopy at various temperatures and under different biases. There is a Si δ-doping sheet under the GaAs surface to screen the surface built-in electric field fro...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2000-01, Vol.39 (S1), p.351
Hauptverfasser:	Lua, Chien-Rong, Lou, Shry-Fong, Cheng, Hung-Hsiang, Lee, Chien-Ping, Tsai, Fu-Yi
Format:	Artikel
Sprache:	eng ; jpn
Online-Zugang:	Volltext
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