Photoconductive Decay in Amorphous Silicon Films

Photoconductive Decay in Amorphous Silicon Films

The photoconductive current behaviors were measured for amorphous silicon films prepared by plasma decomposition and sputtering. The decays becomes faster for shorter and stronger excitation pulse and the slow components of the decays are independent of them and behave as τ -0.5 . The results can be...

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Veröffentlicht in:Japanese Journal of Applied Physics 1981-01, Vol.20 (S2), p.179
Hauptverfasser: Matsumoto, Nobuo, Kagawa, Toshiaki, Motosugi, George, Kumabe, Kenji
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container_issue S2
container_start_page 179
container_title Japanese Journal of Applied Physics
container_volume 20
creator Matsumoto, Nobuo
Kagawa, Toshiaki
Motosugi, George
Kumabe, Kenji
description The photoconductive current behaviors were measured for amorphous silicon films prepared by plasma decomposition and sputtering. The decays becomes faster for shorter and stronger excitation pulse and the slow components of the decays are independent of them and behave as τ -0.5 . The results can be interpreted using a model in which lifetimes of excess carriers are distributed in wide range. It becomes clear that the distribution function G(τ) is consisted of two main components, fast (ττ 0 ) relaxation processes. In the plasma decomposition sample τ 0 is 1 µisec and in the sputtered sample τ 0 is 0.1 µsec.
doi_str_mv 10.7567/JJAPS.20S2.179
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title Photoconductive Decay in Amorphous Silicon Films
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