A comparison study: Direct wafer bonding of SiC-SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam

A comparison study: Direct wafer bonding of SiC-SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam

In this study, the results of direct wafer bonding of SiC-SiC at room temperature by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared, in terms of bonding energy, interface structure and composition, and the effects of rapid thermal annealing (...

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Veröffentlicht in:Applied physics express 2016-08, Vol.9 (8), p.81302
Hauptverfasser: Mu, Fengwen, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Fujino, Masahisa, He, Ran, Suga, Tadatomo
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container_issue 8
container_start_page 81302
container_title Applied physics express
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creator Mu, Fengwen
Iguchi, Kenichi
Nakazawa, Haruo
Takahashi, Yoshikazu
Fujino, Masahisa
He, Ran
Suga, Tadatomo
description In this study, the results of direct wafer bonding of SiC-SiC at room temperature by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared, in terms of bonding energy, interface structure and composition, and the effects of rapid thermal annealing (RTA) at 1273 K in Ar gas. Compared with that obtained by the standard SAB, the bonding interface obtained by the modified SAB with a Si-containing Ar ion beam is ∼30% stronger and almost completely recrystallized without oxidation during RTA, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.
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title A comparison study: Direct wafer bonding of SiC-SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam
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