High-output-power deep ultraviolet light-emitting diode assembly using direct bonding

High-output-power deep ultraviolet light-emitting diode assembly using direct bonding

We fabricated high-output-power 255 and 280 nm light-emitting diodes (LEDs) using direct bonding. The LED chips were bonded to sapphire lenses at room temperature using either atomic diffusion bonding or surface-activated bonding. The LEDs with lenses had a higher light extraction efficiency than co...

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Veröffentlicht in:Applied physics express 2016-07, Vol.9 (7), p.72101
Hauptverfasser: Ichikawa, Masatsugu, Fujioka, Akira, Kosugi, Takao, Endo, Shinya, Sagawa, Harunobu, Tamaki, Hiroto, Mukai, Takashi, Uomoto, Miyuki, Shimatsu, Takehito
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container_end_page
container_issue 7
container_start_page 72101
container_title Applied physics express
container_volume 9
creator Ichikawa, Masatsugu
Fujioka, Akira
Kosugi, Takao
Endo, Shinya
Sagawa, Harunobu
Tamaki, Hiroto
Mukai, Takashi
Uomoto, Miyuki
Shimatsu, Takehito
description We fabricated high-output-power 255 and 280 nm light-emitting diodes (LEDs) using direct bonding. The LED chips were bonded to sapphire lenses at room temperature using either atomic diffusion bonding or surface-activated bonding. The LEDs with lenses had a higher light extraction efficiency than conventionally structured LEDs. As a result, at a forward current of 350 mA, the output power of the 255 nm LED increased by a factor of 2.8, reaching 73.6 mW, while that of the 280 nm LED increased by a factor of 2.3, reaching 153 mW.
doi_str_mv 10.7567/APEX.9.072101
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title High-output-power deep ultraviolet light-emitting diode assembly using direct bonding
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