Electronic properties of diamond Schottky barrier diodes fabricated on silicon-based heteroepitaxially grown diamond substrates

Diamond Schottky barrier diodes (SBDs) were fabricated on silicon-based heteroepitaxially grown diamond substrates. Platinum Schottky metal and boron-doped p-type diamond were used as SBDs. The diodes exhibited good current-voltage (I-V) characteristics. The rectification ratio was over 1012 at ±4 V...

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Veröffentlicht in:	Applied physics express 2015-10, Vol.8 (10), p.104103
Hauptverfasser:	Kawashima, Hiroyuki, Noguchi, Hitoshi, Matsumoto, Tsubasa, Kato, Hiromitsu, Ogura, Masahiko, Makino, Toshiharu, Shirai, Shozo, Takeuchi, Daisuke, Yamasaki, Satoshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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