Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors

This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current-voltage (I-V) measurements reveal that the conduction occurs primarily via thermionic emission (TE)....

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Veröffentlicht in:	Applied physics express 2015-04, Vol.8 (4), p.41001
Hauptverfasser:	Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Kumar, Chandra Mohan Manoj, Anand, Mulagumoottil Jesudas, Liu, Zhi Hong
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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