Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors
This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current-voltage (I-V) measurements reveal that the conduction occurs primarily via thermionic emission (TE)....
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| Veröffentlicht in: | Applied physics express 2015-04, Vol.8 (4), p.41001 |
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| container_title | Applied physics express |
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| creator | Li, Yang Ng, Geok Ing Arulkumaran, Subramaniam Ye, Gang Kumar, Chandra Mohan Manoj Anand, Mulagumoottil Jesudas Liu, Zhi Hong |
| description | This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current-voltage (I-V) measurements reveal that the conduction occurs primarily via thermionic emission (TE). The extracted mean barrier height (ΦB) values are 0.113 and 0.121 eV and the mean contact resistance (Rc) values are 0.24 and 0.28 Ω mm, for annealing temperatures of 850 and 900 °C, respectively. The low Rc is attributed to the formation of low work function TixSiy at the metal-semiconductor interface. The high-resolution transmission electron microscopy (HR-TEM) and energy-dispersive X-ray spectroscopy (EDX) analysis provide further structural evidence in support of the TE mechanism. |
| doi_str_mv | 10.7567/APEX.8.041001 |
| format | Article |
| fullrecord | <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_crossref_primary_10_7567_APEX_8_041001</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>AP141282</sourcerecordid><originalsourceid>FETCH-LOGICAL-c408t-61ed3d21418c0dc09f3c3dd25bf0cb66eb5da903e7746a0c67997a1eba599cb83</originalsourceid><addsrcrecordid>eNptkEFLwzAYhoMoOKdH77mJh67J2ibpsYw5hTEFJ3gLaZKuGW0ykwzcv7djw9MOH-97eHj4eAF4xGhCC0LT6mP-PWETlGOE8BUYYcamCaKMXP93ym7BXQhbhEieYTICPzNn1V5G4yzstWyFNaGHroHW2WTjOgXXIv006dqkVZeuhiKga3sjoXQ2ChkDNBZW3UKs0uFgazZtojstox8EvatNZ-IBRi9sMCE6H-7BTSO6oB_OOQZfL_P17DVZvi_eZtUykTliMSFYq0xNcY6ZREqisslkptS0qBska0J0XShRokxTmhOBJKFlSQXWtSjKUtYsG4Pk5JXeheB1w3fe9MIfOEb8uBc_7sUZP-018E8n3rgd37q9t8N3XOz078DkZ4rvVDOQzxfIy9Y_ayh5Jg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Li, Yang ; Ng, Geok Ing ; Arulkumaran, Subramaniam ; Ye, Gang ; Kumar, Chandra Mohan Manoj ; Anand, Mulagumoottil Jesudas ; Liu, Zhi Hong</creator><creatorcontrib>Li, Yang ; Ng, Geok Ing ; Arulkumaran, Subramaniam ; Ye, Gang ; Kumar, Chandra Mohan Manoj ; Anand, Mulagumoottil Jesudas ; Liu, Zhi Hong</creatorcontrib><description>This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current-voltage (I-V) measurements reveal that the conduction occurs primarily via thermionic emission (TE). The extracted mean barrier height (ΦB) values are 0.113 and 0.121 eV and the mean contact resistance (Rc) values are 0.24 and 0.28 Ω mm, for annealing temperatures of 850 and 900 °C, respectively. The low Rc is attributed to the formation of low work function TixSiy at the metal-semiconductor interface. The high-resolution transmission electron microscopy (HR-TEM) and energy-dispersive X-ray spectroscopy (EDX) analysis provide further structural evidence in support of the TE mechanism.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.7567/APEX.8.041001</identifier><identifier>CODEN: APEPC4</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><ispartof>Applied physics express, 2015-04, Vol.8 (4), p.41001</ispartof><rights>2015 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c408t-61ed3d21418c0dc09f3c3dd25bf0cb66eb5da903e7746a0c67997a1eba599cb83</citedby><cites>FETCH-LOGICAL-c408t-61ed3d21418c0dc09f3c3dd25bf0cb66eb5da903e7746a0c67997a1eba599cb83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/APEX.8.041001/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27903,27904,53825,53872</link.rule.ids></links><search><creatorcontrib>Li, Yang</creatorcontrib><creatorcontrib>Ng, Geok Ing</creatorcontrib><creatorcontrib>Arulkumaran, Subramaniam</creatorcontrib><creatorcontrib>Ye, Gang</creatorcontrib><creatorcontrib>Kumar, Chandra Mohan Manoj</creatorcontrib><creatorcontrib>Anand, Mulagumoottil Jesudas</creatorcontrib><creatorcontrib>Liu, Zhi Hong</creatorcontrib><title>Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors</title><title>Applied physics express</title><addtitle>Appl. Phys. Express</addtitle><description>This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current-voltage (I-V) measurements reveal that the conduction occurs primarily via thermionic emission (TE). The extracted mean barrier height (ΦB) values are 0.113 and 0.121 eV and the mean contact resistance (Rc) values are 0.24 and 0.28 Ω mm, for annealing temperatures of 850 and 900 °C, respectively. The low Rc is attributed to the formation of low work function TixSiy at the metal-semiconductor interface. The high-resolution transmission electron microscopy (HR-TEM) and energy-dispersive X-ray spectroscopy (EDX) analysis provide further structural evidence in support of the TE mechanism.</description><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNptkEFLwzAYhoMoOKdH77mJh67J2ibpsYw5hTEFJ3gLaZKuGW0ykwzcv7djw9MOH-97eHj4eAF4xGhCC0LT6mP-PWETlGOE8BUYYcamCaKMXP93ym7BXQhbhEieYTICPzNn1V5G4yzstWyFNaGHroHW2WTjOgXXIv006dqkVZeuhiKga3sjoXQ2ChkDNBZW3UKs0uFgazZtojstox8EvatNZ-IBRi9sMCE6H-7BTSO6oB_OOQZfL_P17DVZvi_eZtUykTliMSFYq0xNcY6ZREqisslkptS0qBska0J0XShRokxTmhOBJKFlSQXWtSjKUtYsG4Pk5JXeheB1w3fe9MIfOEb8uBc_7sUZP-018E8n3rgd37q9t8N3XOz078DkZ4rvVDOQzxfIy9Y_ayh5Jg</recordid><startdate>20150401</startdate><enddate>20150401</enddate><creator>Li, Yang</creator><creator>Ng, Geok Ing</creator><creator>Arulkumaran, Subramaniam</creator><creator>Ye, Gang</creator><creator>Kumar, Chandra Mohan Manoj</creator><creator>Anand, Mulagumoottil Jesudas</creator><creator>Liu, Zhi Hong</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20150401</creationdate><title>Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors</title><author>Li, Yang ; Ng, Geok Ing ; Arulkumaran, Subramaniam ; Ye, Gang ; Kumar, Chandra Mohan Manoj ; Anand, Mulagumoottil Jesudas ; Liu, Zhi Hong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c408t-61ed3d21418c0dc09f3c3dd25bf0cb66eb5da903e7746a0c67997a1eba599cb83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Yang</creatorcontrib><creatorcontrib>Ng, Geok Ing</creatorcontrib><creatorcontrib>Arulkumaran, Subramaniam</creatorcontrib><creatorcontrib>Ye, Gang</creatorcontrib><creatorcontrib>Kumar, Chandra Mohan Manoj</creatorcontrib><creatorcontrib>Anand, Mulagumoottil Jesudas</creatorcontrib><creatorcontrib>Liu, Zhi Hong</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Yang</au><au>Ng, Geok Ing</au><au>Arulkumaran, Subramaniam</au><au>Ye, Gang</au><au>Kumar, Chandra Mohan Manoj</au><au>Anand, Mulagumoottil Jesudas</au><au>Liu, Zhi Hong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors</atitle><jtitle>Applied physics express</jtitle><addtitle>Appl. Phys. Express</addtitle><date>2015-04-01</date><risdate>2015</risdate><volume>8</volume><issue>4</issue><spage>41001</spage><pages>41001-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><abstract>This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current-voltage (I-V) measurements reveal that the conduction occurs primarily via thermionic emission (TE). The extracted mean barrier height (ΦB) values are 0.113 and 0.121 eV and the mean contact resistance (Rc) values are 0.24 and 0.28 Ω mm, for annealing temperatures of 850 and 900 °C, respectively. The low Rc is attributed to the formation of low work function TixSiy at the metal-semiconductor interface. The high-resolution transmission electron microscopy (HR-TEM) and energy-dispersive X-ray spectroscopy (EDX) analysis provide further structural evidence in support of the TE mechanism.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/APEX.8.041001</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| title | Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors |
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