Dynamical observation of photo-Dember effect on semi-insulating GaAs using femtosecond core-level photoelectron spectroscopy

Dynamical observation of photo-Dember effect on semi-insulating GaAs using femtosecond core-level photoelectron spectroscopy

We investigated ultrafast photogenerated carrier dynamics on a semi-insulating GaAs surface using femtosecond time-resolved core-level photoelectron spectroscopy. We observed a transient change in the surface potential where the Ga-3d core-level peak instantaneously shifted by ∼350 meV toward a high...

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Veröffentlicht in:Applied physics express 2015-02, Vol.8 (2), p.22401
Hauptverfasser: Oguri, Katsuya, Tsunoi, Takanobu, Kato, Keiko, Nakano, Hidetoshi, Nishikawa, Tadashi, Tateno, Kouta, Sogawa, Tetsuomi, Gotoh, Hideki
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container_issue 2
container_start_page 22401
container_title Applied physics express
container_volume 8
creator Oguri, Katsuya
Tsunoi, Takanobu
Kato, Keiko
Nakano, Hidetoshi
Nishikawa, Tadashi
Tateno, Kouta
Sogawa, Tetsuomi
Gotoh, Hideki
description We investigated ultrafast photogenerated carrier dynamics on a semi-insulating GaAs surface using femtosecond time-resolved core-level photoelectron spectroscopy. We observed a transient change in the surface potential where the Ga-3d core-level peak instantaneously shifted by ∼350 meV toward a higher binding energy within 2 ps of a 100 fs laser irradiation. A comparison of the experimental results with numerical simulations based on a drift-diffusion model of a semi-insulating semiconductor revealed that the transient surface potential change was mainly due to the photo-Dember effect, whereby the large difference in the carrier diffusion between the electron and hole instantaneously induced a surface photovoltage.
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title Dynamical observation of photo-Dember effect on semi-insulating GaAs using femtosecond core-level photoelectron spectroscopy
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