In situ doped epitaxial growth of highly dopant-activated n+-Ge layers for reduction of parasitic resistance in Ge-nMISFETs

We selectively grew n+-Ge layers with a carrier concentration as high as 7 × 1019 cm−3 for use as the source and drain regions of Ge-nMISFETs by low-pressure CVD. A high activation rate of 73% for the P-dopant was achieved only within a narrow window of total growth pressure. Ti contacts on the P-do...

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Veröffentlicht in:	Applied physics express 2014-10, Vol.7 (10), p.106501
Hauptverfasser:	Moriyama, Yoshihiko, Kamimuta, Yuuichi, Kamata, Yoshiki, Ikeda, Keiji, Sakai, Akira, Tezuka, Tsutomu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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