Demonstrating 30-nm spatial resolution of three-multilayer-mirror objective for extreme ultraviolet microscopy: Imaging test by observing lithography mask
To confirm the high spatial resolution expected in extreme ultraviolet (EUV) microscopy, fine grating patterns with a half-pitch of less than 100 nm on a lithography mask were imaged using a full-field microscope based on a multilayer-mirror objective. When the tilted illumination technique is appli...
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| Veröffentlicht in: | Applied physics express 2014-10, Vol.7 (10), p.102502 |
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| creator | Toyoda, Mitsunori Yamasoe, Kenjiro Tokimasa, Akifumi Uchida, Kentaro Harada, Tetsuo Terasawa, Tsuneo Amano, Tsuyoshi Watanabe, Takeo Yanagihara, Mihiro Kinoshita, Hiroo |
| description | To confirm the high spatial resolution expected in extreme ultraviolet (EUV) microscopy, fine grating patterns with a half-pitch of less than 100 nm on a lithography mask were imaged using a full-field microscope based on a multilayer-mirror objective. When the tilted illumination technique is applied to this novel imaging system, a spatial resolution better than 20 nm can be expected at a wavelength of 13.5 nm. We demonstrated high resolution via EUV reflection images of test patterns with a half-pitch between 30 and 80 nm. |
| doi_str_mv | 10.7567/APEX.7.102502 |
| format | Article |
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| source | Institute of Physics Journals |
| title | Demonstrating 30-nm spatial resolution of three-multilayer-mirror objective for extreme ultraviolet microscopy: Imaging test by observing lithography mask |
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