Development of InGaN-based red LED grown on (0001) polar surface

We report on the optical properties of the InGaN-based red LED grown on a c-plane sapphire substrate. Blue emission due to phase separation was successfully reduced in the red LED with an active layer consisting of 4-period InGaN multiple quantum wells embedding an AlGaN interlayer with the Al conte...

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Veröffentlicht in:	Applied physics express 2014-07, Vol.7 (7), p.71003
Hauptverfasser:	Hwang, Jong-Il, Hashimoto, Rei, Saito, Shinji, Nunoue, Shinya
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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