Development of InGaN-based red LED grown on (0001) polar surface

Development of InGaN-based red LED grown on (0001) polar surface

We report on the optical properties of the InGaN-based red LED grown on a c-plane sapphire substrate. Blue emission due to phase separation was successfully reduced in the red LED with an active layer consisting of 4-period InGaN multiple quantum wells embedding an AlGaN interlayer with the Al conte...

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Veröffentlicht in:Applied physics express 2014-07, Vol.7 (7), p.71003
Hauptverfasser: Hwang, Jong-Il, Hashimoto, Rei, Saito, Shinji, Nunoue, Shinya
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Saito, Shinji
Nunoue, Shinya
description We report on the optical properties of the InGaN-based red LED grown on a c-plane sapphire substrate. Blue emission due to phase separation was successfully reduced in the red LED with an active layer consisting of 4-period InGaN multiple quantum wells embedding an AlGaN interlayer with the Al content of 90% on each quantum well. The light output power and external quantum efficiency at a dc current of 20 mA were 1.1 mW and 2.9% with the wavelength of 629 nm, respectively. This is the first demonstration of a nitride-based red LED with the light output power exceeding 1 mW at 20 mA.
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