Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method

We report a marked reduction in the dislocation density of a 4H-SiC crystal using a high-efficiency dislocation conversion phenomenon. During the solution growth, threading dislocations were efficiently converted to basal plane defects by the step flow of macrosteps. Utilizing this dislocation conve...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics express 2014-06, Vol.7 (6), p.65501
Hauptverfasser:	Yamamoto, Yuji, Harada, Shunta, Seki, Kazuaki, Horio, Atsushi, Mitsuhashi, Takato, Koike, Daiki, Tagawa, Miho, Ujihara, Toru
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!