Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Implantation and Excimer Laser Annealing

Excimer laser annealing of phosphorus-implanted p-type germanium substrate with various laser energy densities for n + /p junction were investigated. The effects of laser energy density on the redistribution of dopant, surface morphology, and recrystallization of the amorphous Ge induced by ion impl...

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Veröffentlicht in:	Applied physics express 2013-10, Vol.6 (10), p.106501-106501-4
Hauptverfasser:	Wang, Chen, Li, Cheng, Huang, Shihao, Lu, Weifang, Yan, Guangming, Lin, Guangyang, Wei, Jiangbin, Huang, Wei, Lai, Hongkai, Chen, Songyan
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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