Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

The reliability and output power of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) fabricated on AlN substrates prepared by hydride vapor phase epitaxy are reported. TEM analysis revealed that dislocation density in LED layers, except the p-GaN layer, was below $10^{6}$ cm -2 . DUV-LE...

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Veröffentlicht in:	Applied physics express 2013-09, Vol.6 (9), p.092103-092103-3
Hauptverfasser:	Kinoshita, Toru, Obata, Toshiyuki, Nagashima, Toru, Yanagi, Hiroyuki, Moody, Baxter, Mita, Seiji, Inoue, Shin-ichiro, Kumagai, Yoshinao, Koukitu, Akinori, Sitar, Zlatko
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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