Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown GaN seed crystals is described. The initial growth conditions for HVPE are determined and applied for further bulk growth. Smooth GaN layers up to 1.1 mm thick and of excellent crystalline quality, without cracks,...
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| Veröffentlicht in: | Applied physics express 2013-07, Vol.6 (7), p.075504-075504-4 |
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| container_title | Applied physics express |
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| creator | Sochacki, Tomasz Bryan, Zachary Amilusik, Mikolaj Collazo, Ramon Lucznik, Boleslaw Weyher, Jan L Nowak, Grzegorz Sadovyi, Bogdan Kamler, Grzegorz Kucharski, Robert Zajac, Marcin Doradzinski, Roman Dwilinski, Robert Grzegory, Izabella Bockowski, Michal Sitar, Zlatko |
| description | Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown GaN seed crystals is described. The initial growth conditions for HVPE are determined and applied for further bulk growth. Smooth GaN layers up to 1.1 mm thick and of excellent crystalline quality, without cracks, and with low dislocation density are obtained. Preparation of the free-standing HVPE-GaN crystal by slicing and structural and optical quality of the resulting wafer are presented. |
| doi_str_mv | 10.7567/APEX.6.075504 |
| format | Article |
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The initial growth conditions for HVPE are determined and applied for further bulk growth. Smooth GaN layers up to 1.1 mm thick and of excellent crystalline quality, without cracks, and with low dislocation density are obtained. 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The initial growth conditions for HVPE are determined and applied for further bulk growth. Smooth GaN layers up to 1.1 mm thick and of excellent crystalline quality, without cracks, and with low dislocation density are obtained. Preparation of the free-standing HVPE-GaN crystal by slicing and structural and optical quality of the resulting wafer are presented.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/APEX.6.075504</doi></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds |
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