Highly air- and moisture-stable hole-doped carbon nanotube films achieved using boron-based oxidant

Hole doping into carbon nanotubes can be achieved. However, the doped nanotubes usually suffer from the lack of air and moisture stability, thus, they eventually lose their improved electrical properties. Here, we report that a salt of the two-coordinate boron cation Mes2B+ (Mes: 2,4,6-trimethylphen...

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Veröffentlicht in:Applied physics express 2017-03, Vol.10 (3), p.35101
Hauptverfasser: Funahashi, Kazuma, Tanaka, Naoki, Shoji, Yoshiaki, Imazu, Naoki, Nakayama, Ko, Kanahashi, Kaito, Shirae, Hiroyuki, Noda, Suguru, Ohta, Hiromichi, Fukushima, Takanori, Takenobu, Taishi
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container_issue 3
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container_title Applied physics express
container_volume 10
creator Funahashi, Kazuma
Tanaka, Naoki
Shoji, Yoshiaki
Imazu, Naoki
Nakayama, Ko
Kanahashi, Kaito
Shirae, Hiroyuki
Noda, Suguru
Ohta, Hiromichi
Fukushima, Takanori
Takenobu, Taishi
description Hole doping into carbon nanotubes can be achieved. However, the doped nanotubes usually suffer from the lack of air and moisture stability, thus, they eventually lose their improved electrical properties. Here, we report that a salt of the two-coordinate boron cation Mes2B+ (Mes: 2,4,6-trimethylphenyl group) can serve as an efficient hole-doping reagent to produce nanotubes with markedly high stability in the presence of air and moisture. Upon doping, the resistances of the nanotubes decreased, and these states were maintained for one month in air. The hole-doped nanotube films showed a minimal increase in resistance even upon humidification with a relative humidity of 90%.
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title Highly air- and moisture-stable hole-doped carbon nanotube films achieved using boron-based oxidant
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