Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures

We report changes at the interface between Ga-rich/In-rich GaInP vertical slabs in laterally composition modulated (LCM) GaInP as a function of the V/III ratio. The photoluminescence exhibits satellite peaks, indicating that the parasitic potential between the GaInP vertical slabs disappears as the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics express 2017-02, Vol.10 (2), p.25801
Hauptverfasser:	Park, Kwangwook, Kang, Seokjin, Ravindran, Sooraj, Min, Jung-Wook, Lee, Yong-Tak
Format:	Artikel
Sprache:	eng
Schlagworte:	CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS interfaces laterally composition modulated LCM MATERIALS SCIENCE optoelectronic devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!