Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures
We report changes at the interface between Ga-rich/In-rich GaInP vertical slabs in laterally composition modulated (LCM) GaInP as a function of the V/III ratio. The photoluminescence exhibits satellite peaks, indicating that the parasitic potential between the GaInP vertical slabs disappears as the...
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| Veröffentlicht in: | Applied physics express 2017-02, Vol.10 (2), p.25801 |
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| creator | Park, Kwangwook Kang, Seokjin Ravindran, Sooraj Min, Jung-Wook Lee, Yong-Tak |
| description | We report changes at the interface between Ga-rich/In-rich GaInP vertical slabs in laterally composition modulated (LCM) GaInP as a function of the V/III ratio. The photoluminescence exhibits satellite peaks, indicating that the parasitic potential between the GaInP vertical slabs disappears as the V/III ratio decreases. However, a high V/III ratio leads to an abrupt interface, increasing the parasitic potential because of the phosphorus-amount-dependent diffusion of group-III atoms during growth. These results suggest that the V/III ratio is an important parameter that must be wisely chosen in designing optoelectronic devices incorporating LCM structure. |
| doi_str_mv | 10.7567/APEX.10.025801 |
| format | Article |
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(NREL), Golden, CO (United States)</creatorcontrib><description>We report changes at the interface between Ga-rich/In-rich GaInP vertical slabs in laterally composition modulated (LCM) GaInP as a function of the V/III ratio. The photoluminescence exhibits satellite peaks, indicating that the parasitic potential between the GaInP vertical slabs disappears as the V/III ratio decreases. However, a high V/III ratio leads to an abrupt interface, increasing the parasitic potential because of the phosphorus-amount-dependent diffusion of group-III atoms during growth. These results suggest that the V/III ratio is an important parameter that must be wisely chosen in designing optoelectronic devices incorporating LCM structure.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.7567/APEX.10.025801</identifier><identifier>CODEN: APEPC4</identifier><language>eng</language><publisher>United States: The Japan Society of Applied Physics</publisher><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; interfaces ; laterally composition modulated ; LCM ; MATERIALS SCIENCE ; optoelectronic devices</subject><ispartof>Applied physics express, 2017-02, Vol.10 (2), p.25801</ispartof><rights>2017 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c440t-68a74f73b9484c3d6b3ebaeb8340f02ffe235ee7d7b7166ae5eb64ae3e1fe08d3</citedby><cites>FETCH-LOGICAL-c440t-68a74f73b9484c3d6b3ebaeb8340f02ffe235ee7d7b7166ae5eb64ae3e1fe08d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/APEX.10.025801/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>230,314,776,780,881,27901,27902,53821,53868</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/1345117$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Park, Kwangwook</creatorcontrib><creatorcontrib>Kang, Seokjin</creatorcontrib><creatorcontrib>Ravindran, Sooraj</creatorcontrib><creatorcontrib>Min, Jung-Wook</creatorcontrib><creatorcontrib>Lee, Yong-Tak</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><title>Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures</title><title>Applied physics express</title><addtitle>Appl. Phys. Express</addtitle><description>We report changes at the interface between Ga-rich/In-rich GaInP vertical slabs in laterally composition modulated (LCM) GaInP as a function of the V/III ratio. The photoluminescence exhibits satellite peaks, indicating that the parasitic potential between the GaInP vertical slabs disappears as the V/III ratio decreases. However, a high V/III ratio leads to an abrupt interface, increasing the parasitic potential because of the phosphorus-amount-dependent diffusion of group-III atoms during growth. These results suggest that the V/III ratio is an important parameter that must be wisely chosen in designing optoelectronic devices incorporating LCM structure.</description><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>interfaces</subject><subject>laterally composition modulated</subject><subject>LCM</subject><subject>MATERIALS SCIENCE</subject><subject>optoelectronic devices</subject><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLxDAQhYMoqKtXz8GTCF2TJk3iUWRdFwQ9KHgraTrRSDcpSXbVf29LF096mveY7w3MQ-iMkrmshLy6eVq8zgdDykoRuoeOqFJlQaQS-79aqkN0nNIHIYIzKo5QevFbcJ3zb9j5DNFqAwk3kD8BPF75IjrzjrVv8VJPeqlX_glvIWZndIdTp5uEg8WdHuK6676xCes-JJdd8Hgd2s24aXHKcWPyJkI6QQdWdwlOd3OGXu4Wz7f3xcPjcnV781AYzkkuhNKSW8maa664Ya1oGDQaGsU4saS0FkpWAchWNpIKoaGCRnANDKgFolo2Q-fT3ZCyq5NxGcy7Cd6DyTVlvKJUDtB8gkwMKUWwdR_dWsfvmpJ67LUeex3N1OsQuJwCLvT1R9hEP_zwP3zxB6x7-BqhcofVfWvZD1MJiGc</recordid><startdate>20170201</startdate><enddate>20170201</enddate><creator>Park, Kwangwook</creator><creator>Kang, Seokjin</creator><creator>Ravindran, Sooraj</creator><creator>Min, Jung-Wook</creator><creator>Lee, Yong-Tak</creator><general>The Japan Society of Applied Physics</general><general>Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OIOZB</scope><scope>OTOTI</scope></search><sort><creationdate>20170201</creationdate><title>Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures</title><author>Park, Kwangwook ; Kang, Seokjin ; Ravindran, Sooraj ; Min, Jung-Wook ; Lee, Yong-Tak</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c440t-68a74f73b9484c3d6b3ebaeb8340f02ffe235ee7d7b7166ae5eb64ae3e1fe08d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>interfaces</topic><topic>laterally composition modulated</topic><topic>LCM</topic><topic>MATERIALS SCIENCE</topic><topic>optoelectronic devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Kwangwook</creatorcontrib><creatorcontrib>Kang, Seokjin</creatorcontrib><creatorcontrib>Ravindran, Sooraj</creatorcontrib><creatorcontrib>Min, Jung-Wook</creatorcontrib><creatorcontrib>Lee, Yong-Tak</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Kwangwook</au><au>Kang, Seokjin</au><au>Ravindran, Sooraj</au><au>Min, Jung-Wook</au><au>Lee, Yong-Tak</au><aucorp>National Renewable Energy Lab. (NREL), Golden, CO (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures</atitle><jtitle>Applied physics express</jtitle><addtitle>Appl. Phys. Express</addtitle><date>2017-02-01</date><risdate>2017</risdate><volume>10</volume><issue>2</issue><spage>25801</spage><pages>25801-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><abstract>We report changes at the interface between Ga-rich/In-rich GaInP vertical slabs in laterally composition modulated (LCM) GaInP as a function of the V/III ratio. The photoluminescence exhibits satellite peaks, indicating that the parasitic potential between the GaInP vertical slabs disappears as the V/III ratio decreases. However, a high V/III ratio leads to an abrupt interface, increasing the parasitic potential because of the phosphorus-amount-dependent diffusion of group-III atoms during growth. These results suggest that the V/III ratio is an important parameter that must be wisely chosen in designing optoelectronic devices incorporating LCM structure.</abstract><cop>United States</cop><pub>The Japan Society of Applied Physics</pub><doi>10.7567/APEX.10.025801</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS interfaces laterally composition modulated LCM MATERIALS SCIENCE optoelectronic devices |
| title | Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures |
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