Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization

Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization

To improve wafer utilization efficiency and heat dissipation performance, this paper proposes multilevel metallization-structured, lateral-type AlGaN/GaN heterostructure field-effect transistors (HFETs) on a 150 mm Si substrate using photosensitive polyimide (PSPI) as the intermetal dielectric layer...

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Veröffentlicht in:Applied physics express 2017-01, Vol.10 (1), p.16502
Hauptverfasser: Oh, Seung Kyu, Jang, Taehoon, Pouladi, Sara, Jo, Young Je, Ko, Hwa-Young, Ryou, Jae-Hyun, Kwak, Joon Seop
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container_start_page 16502
container_title Applied physics express
container_volume 10
creator Oh, Seung Kyu
Jang, Taehoon
Pouladi, Sara
Jo, Young Je
Ko, Hwa-Young
Ryou, Jae-Hyun
Kwak, Joon Seop
description To improve wafer utilization efficiency and heat dissipation performance, this paper proposes multilevel metallization-structured, lateral-type AlGaN/GaN heterostructure field-effect transistors (HFETs) on a 150 mm Si substrate using photosensitive polyimide (PSPI) as the intermetal dielectric layer. The maximum drain current of the HFETs is 46.3 A, which is 240% higher than that of conventional AlGaN/GaN HFETs with the same die size. Furthermore, the drain current drop of the HFETs under high-bias operation is reduced from 14.07 to 8.09%, as compared to that of conventional HFETs.
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title Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization
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