Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films

Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films

We study the quantum size effect (QSE) in the spin-dependent electronic structure at the conduction band (CB) bottom (Γ point) of an n-type ferromagnetic semiconductor (In0.92,Fe0.08)As ultrathin films (thickness t = 8-14 nm), by performing magnetic circular dichroism (MCD) spectroscopy in an infra-...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics express 2019-07, Vol.12 (7), p.73001
Hauptverfasser: Kaneta, Shingo, Duc Anh, Le, Sriharsha, Karumuri, Tanaka, Masaaki
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 7
container_start_page 73001
container_title Applied physics express
container_volume 12
creator Kaneta, Shingo
Duc Anh, Le
Sriharsha, Karumuri
Tanaka, Masaaki
description We study the quantum size effect (QSE) in the spin-dependent electronic structure at the conduction band (CB) bottom (Γ point) of an n-type ferromagnetic semiconductor (In0.92,Fe0.08)As ultrathin films (thickness t = 8-14 nm), by performing magnetic circular dichroism (MCD) spectroscopy in an infra-red photon energy range (E = 0.62-1.8 eV). The t-dependence of MCD peaks are well explained by the optical transitions from the valence band top to the quantized levels at the CB bottom of (In,Fe)As obtained from self-consistent calculations. These findings provide new possibilities of spin-device applications utilizing QSE in nm-scale (In,Fe)As thin films.
doi_str_mv 10.7567/1882-0786/ab25c8
format Article
fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_crossref_primary_10_7567_1882_0786_ab25c8</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apexab25c8</sourcerecordid><originalsourceid>FETCH-LOGICAL-c379t-c997b78aaa81d0a2de70ead2de15b075463805f761042a20bafd97e497db2bd83</originalsourceid><addsrcrecordid>eNp9kE1LAzEURYMoWKt7l1lW6NhkvpJZlmK1UOhG1yGZJJrSScYkI1b_vDO2dCWu3uNx7uVxALjF6J4UJZlhStMEEVrOuEiLmp6B0el0ftoJvQRXIWwRKvMMlyPwvRFB-Q8ejbPQafjecRu7BgbzpaDSWtUR8gjjm4K1s7Krf0HBrYTCxeiaIWSTuG8V1Mp71_BXq6KpYVCNOUach5OVnS7V3Tz0VcZCbXZNuAYXmu-CujnOMXhZPjwvnpL15nG1mK-TOiNVTOqqIoJQzjnFEvFUKoIUl_3EhUCkyMuMokKTEqM85SkSXMuKqLwiUqRC0mwM0KG39i4ErzRrvWm43zOM2CCPDXbYYIod5PWR6SFiXMu2rvO2f_A_fPIHzlv1yXDKSM9mCGHWSp39ACLzgJk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Kaneta, Shingo ; Duc Anh, Le ; Sriharsha, Karumuri ; Tanaka, Masaaki</creator><creatorcontrib>Kaneta, Shingo ; Duc Anh, Le ; Sriharsha, Karumuri ; Tanaka, Masaaki</creatorcontrib><description>We study the quantum size effect (QSE) in the spin-dependent electronic structure at the conduction band (CB) bottom (Γ point) of an n-type ferromagnetic semiconductor (In0.92,Fe0.08)As ultrathin films (thickness t = 8-14 nm), by performing magnetic circular dichroism (MCD) spectroscopy in an infra-red photon energy range (E = 0.62-1.8 eV). The t-dependence of MCD peaks are well explained by the optical transitions from the valence band top to the quantized levels at the CB bottom of (In,Fe)As obtained from self-consistent calculations. These findings provide new possibilities of spin-device applications utilizing QSE in nm-scale (In,Fe)As thin films.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.7567/1882-0786/ab25c8</identifier><identifier>CODEN: APEPC4</identifier><language>eng</language><publisher>IOP Publishing</publisher><ispartof>Applied physics express, 2019-07, Vol.12 (7), p.73001</ispartof><rights>2019 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c379t-c997b78aaa81d0a2de70ead2de15b075463805f761042a20bafd97e497db2bd83</citedby><cites>FETCH-LOGICAL-c379t-c997b78aaa81d0a2de70ead2de15b075463805f761042a20bafd97e497db2bd83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/1882-0786/ab25c8/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Kaneta, Shingo</creatorcontrib><creatorcontrib>Duc Anh, Le</creatorcontrib><creatorcontrib>Sriharsha, Karumuri</creatorcontrib><creatorcontrib>Tanaka, Masaaki</creatorcontrib><title>Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films</title><title>Applied physics express</title><addtitle>Appl. Phys. Express</addtitle><description>We study the quantum size effect (QSE) in the spin-dependent electronic structure at the conduction band (CB) bottom (Γ point) of an n-type ferromagnetic semiconductor (In0.92,Fe0.08)As ultrathin films (thickness t = 8-14 nm), by performing magnetic circular dichroism (MCD) spectroscopy in an infra-red photon energy range (E = 0.62-1.8 eV). The t-dependence of MCD peaks are well explained by the optical transitions from the valence band top to the quantized levels at the CB bottom of (In,Fe)As obtained from self-consistent calculations. These findings provide new possibilities of spin-device applications utilizing QSE in nm-scale (In,Fe)As thin films.</description><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEURYMoWKt7l1lW6NhkvpJZlmK1UOhG1yGZJJrSScYkI1b_vDO2dCWu3uNx7uVxALjF6J4UJZlhStMEEVrOuEiLmp6B0el0ftoJvQRXIWwRKvMMlyPwvRFB-Q8ejbPQafjecRu7BgbzpaDSWtUR8gjjm4K1s7Krf0HBrYTCxeiaIWSTuG8V1Mp71_BXq6KpYVCNOUach5OVnS7V3Tz0VcZCbXZNuAYXmu-CujnOMXhZPjwvnpL15nG1mK-TOiNVTOqqIoJQzjnFEvFUKoIUl_3EhUCkyMuMokKTEqM85SkSXMuKqLwiUqRC0mwM0KG39i4ErzRrvWm43zOM2CCPDXbYYIod5PWR6SFiXMu2rvO2f_A_fPIHzlv1yXDKSM9mCGHWSp39ACLzgJk</recordid><startdate>20190701</startdate><enddate>20190701</enddate><creator>Kaneta, Shingo</creator><creator>Duc Anh, Le</creator><creator>Sriharsha, Karumuri</creator><creator>Tanaka, Masaaki</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20190701</creationdate><title>Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films</title><author>Kaneta, Shingo ; Duc Anh, Le ; Sriharsha, Karumuri ; Tanaka, Masaaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c379t-c997b78aaa81d0a2de70ead2de15b075463805f761042a20bafd97e497db2bd83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kaneta, Shingo</creatorcontrib><creatorcontrib>Duc Anh, Le</creatorcontrib><creatorcontrib>Sriharsha, Karumuri</creatorcontrib><creatorcontrib>Tanaka, Masaaki</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kaneta, Shingo</au><au>Duc Anh, Le</au><au>Sriharsha, Karumuri</au><au>Tanaka, Masaaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films</atitle><jtitle>Applied physics express</jtitle><addtitle>Appl. Phys. Express</addtitle><date>2019-07-01</date><risdate>2019</risdate><volume>12</volume><issue>7</issue><spage>73001</spage><pages>73001-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><abstract>We study the quantum size effect (QSE) in the spin-dependent electronic structure at the conduction band (CB) bottom (Γ point) of an n-type ferromagnetic semiconductor (In0.92,Fe0.08)As ultrathin films (thickness t = 8-14 nm), by performing magnetic circular dichroism (MCD) spectroscopy in an infra-red photon energy range (E = 0.62-1.8 eV). The t-dependence of MCD peaks are well explained by the optical transitions from the valence band top to the quantized levels at the CB bottom of (In,Fe)As obtained from self-consistent calculations. These findings provide new possibilities of spin-device applications utilizing QSE in nm-scale (In,Fe)As thin films.</abstract><pub>IOP Publishing</pub><doi>10.7567/1882-0786/ab25c8</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1882-0778
ispartof Applied physics express, 2019-07, Vol.12 (7), p.73001
issn 1882-0778
1882-0786
language eng
recordid cdi_crossref_primary_10_7567_1882_0786_ab25c8
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T04%3A32%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Observation%20of%20quantum%20size%20effect%20at%20the%20conduction%20band%20bottom%20of%20n-type%20ferromagnetic%20semiconductor%20(In,Fe)As%20thin%20films&rft.jtitle=Applied%20physics%20express&rft.au=Kaneta,%20Shingo&rft.date=2019-07-01&rft.volume=12&rft.issue=7&rft.spage=73001&rft.pages=73001-&rft.issn=1882-0778&rft.eissn=1882-0786&rft.coden=APEPC4&rft_id=info:doi/10.7567/1882-0786/ab25c8&rft_dat=%3Ciop_cross%3Eapexab25c8%3C/iop_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true