1.2 kV silicon carbide Schottky barrier diode embedded MOSFETs with extension structure and titanium-based single contact

Recently, to avoid forward-voltage degradation of body diodes, which is caused by the expansion of stacking faults due to hole-current conduction through the body diodes, silicon carbide (SiC) Schottky barrier diode (SBD) embedded metal-oxide-semiconductor field effect transistors have been actively...

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Veröffentlicht in:	JAPANESE JOURNAL OF APPLIED PHYSICS 2020-02, Vol.59 (2), p.26502, Article 026502
Hauptverfasser:	Shimizu, Haruka, Watanabe, Naoki, Morikawa, Takahiro, Shima, Akio, Iwamuro, Noriyuki
Format:	Artikel
Sprache:	eng
Schlagworte:	Physical Sciences Physics Physics, Applied Science & Technology
Online-Zugang:	Volltext
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