SiC quantum dot formation in SiO 2 layer using double hot-Si + /C + -ion implantation technique

SiC quantum dot formation in SiO 2 layer using double hot-Si + /C + -ion implantation technique

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Veröffentlicht in:Japanese Journal of Applied Physics 2020-04, Vol.59 (SG), p.SGGH02
Hauptverfasser: Mizuno, Tomohisa, Kanazawa, Rikito, Aoki, Takashi, Sameshima, Toshiyuki
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container_issue SG
container_start_page SGGH02
container_title Japanese Journal of Applied Physics
container_volume 59
creator Mizuno, Tomohisa
Kanazawa, Rikito
Aoki, Takashi
Sameshima, Toshiyuki
description
doi_str_mv 10.7567/1347-4065/ab5bc4
format Article
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title SiC quantum dot formation in SiO 2 layer using double hot-Si + /C + -ion implantation technique
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