Investigation of pits in Ge-doped GaN grown by HVPE
The pits in Ge-doped GaN grown by hydride vapor phase epitaxy were carefully studied. It was found that the pit density increases with Ge concentration and dislocation density. Cross-sectional cathodoluminescence (CL) image shows that the embedment of pit occurs immediately after the cut off of Ge p...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2019-12, Vol.58 (12), p.120910 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Zhang, Yumin Wang, Jianfeng Su, Xujun Cai, Demin Xu, Yu Wang, Mingyue Hu, Xiaojian Zheng, Shunan Xu, Lin Xu, Ke |
| description | The pits in Ge-doped GaN grown by hydride vapor phase epitaxy were carefully studied. It was found that the pit density increases with Ge concentration and dislocation density. Cross-sectional cathodoluminescence (CL) image shows that the embedment of pit occurs immediately after the cut off of Ge precursor. Planar-view CL image shows that the center of every pit is a dislocation, which is further confirmed by transmission electron microscopy measurements. Ge droplets were found in the center of pits of heavily doped samples. These results are beneficial for the study on the origin of pits in Ge-doped GaN. |
| doi_str_mv | 10.7567/1347-4065/ab56f5 |
| format | Article |
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It was found that the pit density increases with Ge concentration and dislocation density. Cross-sectional cathodoluminescence (CL) image shows that the embedment of pit occurs immediately after the cut off of Ge precursor. Planar-view CL image shows that the center of every pit is a dislocation, which is further confirmed by transmission electron microscopy measurements. Ge droplets were found in the center of pits of heavily doped samples. These results are beneficial for the study on the origin of pits in Ge-doped GaN.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/1347-4065/ab56f5</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>IOP Publishing</publisher><ispartof>Japanese Journal of Applied Physics, 2019-12, Vol.58 (12), p.120910</ispartof><rights>2019 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c380t-44e90d27585d990e292e6ea808a8f2074157ac3b0c419b6dcece3e64c54d8b3d3</citedby><cites>FETCH-LOGICAL-c380t-44e90d27585d990e292e6ea808a8f2074157ac3b0c419b6dcece3e64c54d8b3d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/1347-4065/ab56f5/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Zhang, Yumin</creatorcontrib><creatorcontrib>Wang, Jianfeng</creatorcontrib><creatorcontrib>Su, Xujun</creatorcontrib><creatorcontrib>Cai, Demin</creatorcontrib><creatorcontrib>Xu, Yu</creatorcontrib><creatorcontrib>Wang, Mingyue</creatorcontrib><creatorcontrib>Hu, Xiaojian</creatorcontrib><creatorcontrib>Zheng, Shunan</creatorcontrib><creatorcontrib>Xu, Lin</creatorcontrib><creatorcontrib>Xu, Ke</creatorcontrib><title>Investigation of pits in Ge-doped GaN grown by HVPE</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>The pits in Ge-doped GaN grown by hydride vapor phase epitaxy were carefully studied. It was found that the pit density increases with Ge concentration and dislocation density. Cross-sectional cathodoluminescence (CL) image shows that the embedment of pit occurs immediately after the cut off of Ge precursor. Planar-view CL image shows that the center of every pit is a dislocation, which is further confirmed by transmission electron microscopy measurements. Ge droplets were found in the center of pits of heavily doped samples. 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J. Appl. Phys</addtitle><date>2019-12-01</date><risdate>2019</risdate><volume>58</volume><issue>12</issue><spage>120910</spage><pages>120910-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>The pits in Ge-doped GaN grown by hydride vapor phase epitaxy were carefully studied. It was found that the pit density increases with Ge concentration and dislocation density. Cross-sectional cathodoluminescence (CL) image shows that the embedment of pit occurs immediately after the cut off of Ge precursor. Planar-view CL image shows that the center of every pit is a dislocation, which is further confirmed by transmission electron microscopy measurements. Ge droplets were found in the center of pits of heavily doped samples. These results are beneficial for the study on the origin of pits in Ge-doped GaN.</abstract><pub>IOP Publishing</pub><doi>10.7567/1347-4065/ab56f5</doi><tpages>4</tpages></addata></record> |
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| title | Investigation of pits in Ge-doped GaN grown by HVPE |
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