Growth of GaN on a three-dimensional SCAAT TM bulk seed by tri-halide vapor phase epitaxy using GaCl 3

GaN with a film thickness of 200–600 μ m was grown on the as-grown three-dimensional supercritical acidic ammonia technology (SCAAT TM ) bulk seed that comprised only semipolar { 10 1 ¯ 1 ¯ } planes at a temperature as high as 1390 °C by tri-halide vapor phase epitaxy; further, the GaN film was also characterized. The FWHM value of the X-ray rocking curves was ∼40″, which was almost similar to the value of the used seed. The curvature radii were as large as 40–64 m. Further, the carrier concentrations were observed to be as small as 5.1 × 10 17 –9.1 × 10 17 cm −3 . However, the basal plane stacking fault densities were observed to be 3.4 × 10 1 –5.4 × 10 1 cm −1 and were observed to increase during the growth process because of the as-grown SCAAT TM seed surface condition.