Highly sensitive spintronic strain-gauge sensor and Spin-MEMS microphone
Strain-gauge sensors consisting of magnetic tunnel junctions (MTJs) have attracted attention because of their high strain sensitivity based on a novel strain sensing scheme different from the piezoresistive effect. To maximize the strain sensitivity of these spintronic strain-gauge sensors (Spin-SGS...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2019-06, Vol.58 (SD), p.SD0802 |
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| container_issue | SD |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 58 |
| creator | Fuji, Yoshihiko Higashi, Yoshihiro Kaji, Shiori Masunishi, Kei Nagata, Tomohiko Yuzawa, Akiko Okamoto, Kazuaki Baba, Shotaro Ono, Tomio Hara, Michiko |
| description | Strain-gauge sensors consisting of magnetic tunnel junctions (MTJs) have attracted attention because of their high strain sensitivity based on a novel strain sensing scheme different from the piezoresistive effect. To maximize the strain sensitivity of these spintronic strain-gauge sensors (Spin-SGSs), we previously developed an MTJ film with magnetostrictive material that acutely rotates with strain. This review presents a Spin-SGS with a high gauge factor in excess of 5000, which was achieved by adopting an amorphous FeB-based sensing layer with high magnetostriction and low coercivity in a high magnetoresistance Mg-O barrier MTJ. We also investigated the feasibility of using this Spin-SGS in microelectromechanical system (MEMS) sensor devices. This review also describes the properties of a "Spintronic MEMS (Spin-MEMS) microphone," in which Spin-SGSs are integrated onto a bulk micromachined diaphragm. |
| doi_str_mv | 10.7567/1347-4065/ab12c0 |
| format | Article |
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To maximize the strain sensitivity of these spintronic strain-gauge sensors (Spin-SGSs), we previously developed an MTJ film with magnetostrictive material that acutely rotates with strain. This review presents a Spin-SGS with a high gauge factor in excess of 5000, which was achieved by adopting an amorphous FeB-based sensing layer with high magnetostriction and low coercivity in a high magnetoresistance Mg-O barrier MTJ. We also investigated the feasibility of using this Spin-SGS in microelectromechanical system (MEMS) sensor devices. 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This review also describes the properties of a "Spintronic MEMS (Spin-MEMS) microphone," in which Spin-SGSs are integrated onto a bulk micromachined diaphragm.</description><subject>Coercivity</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Magnetostriction</subject><subject>Microelectromechanical systems</subject><subject>Micromachining</subject><subject>Sensitivity</subject><subject>Sensors</subject><subject>Strain gauges</subject><subject>Tunnel junctions</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKt3jwueBGOT7Gaze5RarWDxUD2HfLZZ2s2abIX-e1NX9KKQIczMM-8MLwCXGN0yWrIJzgsGC1TSiZCYKHQERj-lYzBCiGBY1IScgrMYm5SWtMAjMJ-71Xqzz6Jpo-vdh8li59o--NapLPZBuBauxG5lvggfMtHqbJkQuJgtltnWqeC7tW_NOTixYhPNxfc_Bm8Ps9fpHD6_PD5N756hyquih1hLLRBTuq41ZjkltdRUMoNqiy2iwiojaWqJUghtlWQVq0hdqVJiQw0h-RhcDbpd8O87E3ve-F1o00pOSIlwmRcpxgANVDovxmAs74LbirDnGPGDX_xgDj-Ywwe_0sj1MOJ896vZNKLjtOLL-_RQhQjvtE3szR_sv9KfBIV6sw</recordid><startdate>20190601</startdate><enddate>20190601</enddate><creator>Fuji, Yoshihiko</creator><creator>Higashi, Yoshihiro</creator><creator>Kaji, Shiori</creator><creator>Masunishi, Kei</creator><creator>Nagata, Tomohiko</creator><creator>Yuzawa, Akiko</creator><creator>Okamoto, Kazuaki</creator><creator>Baba, Shotaro</creator><creator>Ono, Tomio</creator><creator>Hara, Michiko</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20190601</creationdate><title>Highly sensitive spintronic strain-gauge sensor and Spin-MEMS microphone</title><author>Fuji, Yoshihiko ; Higashi, Yoshihiro ; Kaji, Shiori ; Masunishi, Kei ; Nagata, Tomohiko ; Yuzawa, Akiko ; Okamoto, Kazuaki ; Baba, Shotaro ; Ono, Tomio ; Hara, Michiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-1dbda07cd99d173529bd5b7e09f1f05afceb59d1a6aadfcb7878298c6b1e5e223</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Coercivity</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Magnetostriction</topic><topic>Microelectromechanical systems</topic><topic>Micromachining</topic><topic>Sensitivity</topic><topic>Sensors</topic><topic>Strain gauges</topic><topic>Tunnel junctions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fuji, Yoshihiko</creatorcontrib><creatorcontrib>Higashi, Yoshihiro</creatorcontrib><creatorcontrib>Kaji, Shiori</creatorcontrib><creatorcontrib>Masunishi, Kei</creatorcontrib><creatorcontrib>Nagata, Tomohiko</creatorcontrib><creatorcontrib>Yuzawa, Akiko</creatorcontrib><creatorcontrib>Okamoto, Kazuaki</creatorcontrib><creatorcontrib>Baba, Shotaro</creatorcontrib><creatorcontrib>Ono, Tomio</creatorcontrib><creatorcontrib>Hara, Michiko</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fuji, Yoshihiko</au><au>Higashi, Yoshihiro</au><au>Kaji, Shiori</au><au>Masunishi, Kei</au><au>Nagata, Tomohiko</au><au>Yuzawa, Akiko</au><au>Okamoto, Kazuaki</au><au>Baba, Shotaro</au><au>Ono, Tomio</au><au>Hara, Michiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly sensitive spintronic strain-gauge sensor and Spin-MEMS microphone</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2019-06-01</date><risdate>2019</risdate><volume>58</volume><issue>SD</issue><spage>SD0802</spage><pages>SD0802-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Strain-gauge sensors consisting of magnetic tunnel junctions (MTJs) have attracted attention because of their high strain sensitivity based on a novel strain sensing scheme different from the piezoresistive effect. To maximize the strain sensitivity of these spintronic strain-gauge sensors (Spin-SGSs), we previously developed an MTJ film with magnetostrictive material that acutely rotates with strain. This review presents a Spin-SGS with a high gauge factor in excess of 5000, which was achieved by adopting an amorphous FeB-based sensing layer with high magnetostriction and low coercivity in a high magnetoresistance Mg-O barrier MTJ. We also investigated the feasibility of using this Spin-SGS in microelectromechanical system (MEMS) sensor devices. This review also describes the properties of a "Spintronic MEMS (Spin-MEMS) microphone," in which Spin-SGSs are integrated onto a bulk micromachined diaphragm.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.7567/1347-4065/ab12c0</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Coercivity Magnetoresistance Magnetoresistivity Magnetostriction Microelectromechanical systems Micromachining Sensitivity Sensors Strain gauges Tunnel junctions |
| title | Highly sensitive spintronic strain-gauge sensor and Spin-MEMS microphone |
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