Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

We have studied the impact on the surface orientation of different sputtered Al layers followed by AlN layers sputtered on m-plane sapphire. These initial layers were then overgrown by AlN and followed by GaN using metal-organic vapor phase epitaxy (MOVPE). By increasing sputtering time of the initi...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2019-06, Vol.58 (SC), p.SC1044
Hauptverfasser:	Nan, HU, Dinh, Duc V., Pristovsek, Markus, Honda, Yoshio, Amano, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride Gallium nitrides Metalorganic chemical vapor deposition Orientation Sapphire Thickness Transmission electron microscopy Vapor phase epitaxy
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