Steep switching less than 15 mV dec−1 in silicon-on-insulator tunnel FETs by a trimmed-gate structure

We study a novel trimmed-gate (TG) structure, which substantially decreases the subthreshold swing (SS) of a tunnel field-effect transistor (TFET). Our technology computer-aided simulations demonstrate that the TG structure strongly suppresses the off leak component of the band-to-band tunneling cur...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2019-04, Vol.58 (SB), p.SBBA16
Hauptverfasser:	Asai, Hidehiro, Mori, Takahiro, Matsukawa, Takashi, Hattori, Junichi, Endo, Kazuhiko, Fukuda, Koichi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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