Improvement of Oxidation Resistivity of Carbon Material by SiC Reduced from SiO2 on the Inner Wall of Open Pores

SiO2 was separated from an impregnated borosilicate glass on the inner wall of open pores in a brand of carbon material, AGEN. Crystalline silicon carbide was formed by a reaction of this SiO2 and wall carbon at 1900°C under a N2 atmosphere. No weight loss in the obtained AGEN was observed in air at...

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Veröffentlicht in:	TANSO 1994/10/17, Vol.1994(164), pp.206-212
Hauptverfasser:	Ikeda, Shigeru, Shioyama, Hiroshi, Nakamura, Osamu, Hori, Shoji, Eguchi, Kiyohisa, Matsuo, Kanji, Fujii, Rokuro
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon material Oxidation resistivity SiC formation
Online-Zugang:	Volltext
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