Improvement of Oxidation Resistivity of Carbon Material by SiC Reduced from SiO2 on the Inner Wall of Open Pores
SiO2 was separated from an impregnated borosilicate glass on the inner wall of open pores in a brand of carbon material, AGEN. Crystalline silicon carbide was formed by a reaction of this SiO2 and wall carbon at 1900°C under a N2 atmosphere. No weight loss in the obtained AGEN was observed in air at...
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| Veröffentlicht in: | TANSO 1994/10/17, Vol.1994(164), pp.206-212 |
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| container_issue | 164 |
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| container_title | TANSO |
| container_volume | 1994 |
| creator | Ikeda, Shigeru Shioyama, Hiroshi Nakamura, Osamu Hori, Shoji Eguchi, Kiyohisa Matsuo, Kanji Fujii, Rokuro |
| description | SiO2 was separated from an impregnated borosilicate glass on the inner wall of open pores in a brand of carbon material, AGEN. Crystalline silicon carbide was formed by a reaction of this SiO2 and wall carbon at 1900°C under a N2 atmosphere. No weight loss in the obtained AGEN was observed in air at every temperatures between 400 and 1550°C. Little weight loss was also observed even in heating at 1600 and 1650°C. Mechanical strength at room temperature was improved about 1.6 times compared with that of AGEN, but electrical conductivity was kept invariably after SiC formation. |
| doi_str_mv | 10.7209/tanso.1994.206 |
| format | Article |
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Crystalline silicon carbide was formed by a reaction of this SiO2 and wall carbon at 1900°C under a N2 atmosphere. No weight loss in the obtained AGEN was observed in air at every temperatures between 400 and 1550°C. Little weight loss was also observed even in heating at 1600 and 1650°C. 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| fulltext | fulltext |
| identifier | ISSN: 0371-5345 |
| ispartof | TANSO, 1994/10/17, Vol.1994(164), pp.206-212 |
| issn | 0371-5345 1884-5495 |
| language | eng |
| recordid | cdi_crossref_primary_10_7209_tanso_1994_206 |
| source | EZB-FREE-00999 freely available EZB journals |
| subjects | Carbon material Oxidation resistivity SiC formation |
| title | Improvement of Oxidation Resistivity of Carbon Material by SiC Reduced from SiO2 on the Inner Wall of Open Pores |
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