Features of Recombination Radiation of GaAs Type Semiconductors with the Participation of Fine Acceptor Levels in a Magnetic Field

Features of Recombination Radiation of GaAs Type Semiconductors with the Participation of Fine Acceptor Levels in a Magnetic Field

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Veröffentlicht in:Journal of applied mathematics and physics 2024, Vol.12 (7), p.2407-2420
Hauptverfasser: Yuldashev, Nosirjon Khaydarovich, Yulchiev, Iftixorjon Isaqovich, Akhmadaliev, Bozorboy Joboraliyevich, Sulaymonov, Khusanboy Manopovich
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container_title Journal of applied mathematics and physics
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creator Yuldashev, Nosirjon Khaydarovich
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Sulaymonov, Khusanboy Manopovich
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doi_str_mv 10.4236/jamp.2024.127145
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title Features of Recombination Radiation of GaAs Type Semiconductors with the Participation of Fine Acceptor Levels in a Magnetic Field
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