Corrigendum to “Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode”

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	ETRI journal 2022-02, Vol.44 (1), p.169-169
Hauptverfasser:	Sim, Jae‐Sik, Kim, Kisoo, Song, Minje, Kim, Sungil, Song, Minhyup
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	169
container_issue	1
container_start_page	169
container_title	ETRI journal
container_volume	44
creator	Sim, Jae‐Sik Kim, Kisoo Song, Minje Kim, Sungil Song, Minhyup
description
doi_str_mv	10.4218/etr2.12429
format	Article
fullrecord	<record><control><sourceid>wiley_cross</sourceid><recordid>TN_cdi_crossref_primary_10_4218_etr2_12429</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ETR212429</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1139-bcc78953ef9d26196974d4f1f456397b53feec4fb7f07e56aae4790d600f42383</originalsourceid><addsrcrecordid>eNp9kD1OwzAAhS0EEqWwcALPSKH-ixOPUVVKpUqVUJkjxz-tURJHdgoqU4_AAeByPQmUMDO94X3vDR8AtxjdM4LziekDuceEEXEGRoRQmmSU8HMwwoSkCWecXoKrGF8QIoil-Qjspj4EtzGt3jWw9_B4-Fx1vWvcu-ydb6G3UG1l2BgoWw2bXd27rnZqKGu5NyGeGIKOh4951UW4aOeyiJNFW9RFhPJV1rJVWwO7re-9dl6b4-HrGlxYWUdz85dj8PwwW08fk-VqvpgWy0RhTEVSKZXlIqXGCk04FlxkTDOLLUs5FVmVUmuMYrbKLMpMyqU0LBNIc4QsIzSnY3A3_KrgYwzGll1wjQz7EqPyJKw8CSt_hf3AeIDfXG32_5DlbP1Ehs03XYtxhw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Corrigendum to “Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode”</title><source>Wiley Free Content</source><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><creator>Sim, Jae‐Sik ; Kim, Kisoo ; Song, Minje ; Kim, Sungil ; Song, Minhyup</creator><creatorcontrib>Sim, Jae‐Sik ; Kim, Kisoo ; Song, Minje ; Kim, Sungil ; Song, Minhyup</creatorcontrib><identifier>ISSN: 1225-6463</identifier><identifier>EISSN: 2233-7326</identifier><identifier>DOI: 10.4218/etr2.12429</identifier><language>eng</language><ispartof>ETRI journal, 2022-02, Vol.44 (1), p.169-169</ispartof><rights>1225‐6463/$ © 2021 ETRI</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.4218%2Fetr2.12429$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.4218%2Fetr2.12429$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,860,1427,27901,27902,46384,46808</link.rule.ids></links><search><creatorcontrib>Sim, Jae‐Sik</creatorcontrib><creatorcontrib>Kim, Kisoo</creatorcontrib><creatorcontrib>Song, Minje</creatorcontrib><creatorcontrib>Kim, Sungil</creatorcontrib><creatorcontrib>Song, Minhyup</creatorcontrib><title>Corrigendum to “Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode”</title><title>ETRI journal</title><issn>1225-6463</issn><issn>2233-7326</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kD1OwzAAhS0EEqWwcALPSKH-ixOPUVVKpUqVUJkjxz-tURJHdgoqU4_AAeByPQmUMDO94X3vDR8AtxjdM4LziekDuceEEXEGRoRQmmSU8HMwwoSkCWecXoKrGF8QIoil-Qjspj4EtzGt3jWw9_B4-Fx1vWvcu-ydb6G3UG1l2BgoWw2bXd27rnZqKGu5NyGeGIKOh4951UW4aOeyiJNFW9RFhPJV1rJVWwO7re-9dl6b4-HrGlxYWUdz85dj8PwwW08fk-VqvpgWy0RhTEVSKZXlIqXGCk04FlxkTDOLLUs5FVmVUmuMYrbKLMpMyqU0LBNIc4QsIzSnY3A3_KrgYwzGll1wjQz7EqPyJKw8CSt_hf3AeIDfXG32_5DlbP1Ehs03XYtxhw</recordid><startdate>202202</startdate><enddate>202202</enddate><creator>Sim, Jae‐Sik</creator><creator>Kim, Kisoo</creator><creator>Song, Minje</creator><creator>Kim, Sungil</creator><creator>Song, Minhyup</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>202202</creationdate><title>Corrigendum to “Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode”</title><author>Sim, Jae‐Sik ; Kim, Kisoo ; Song, Minje ; Kim, Sungil ; Song, Minhyup</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1139-bcc78953ef9d26196974d4f1f456397b53feec4fb7f07e56aae4790d600f42383</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sim, Jae‐Sik</creatorcontrib><creatorcontrib>Kim, Kisoo</creatorcontrib><creatorcontrib>Song, Minje</creatorcontrib><creatorcontrib>Kim, Sungil</creatorcontrib><creatorcontrib>Song, Minhyup</creatorcontrib><collection>CrossRef</collection><jtitle>ETRI journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sim, Jae‐Sik</au><au>Kim, Kisoo</au><au>Song, Minje</au><au>Kim, Sungil</au><au>Song, Minhyup</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Corrigendum to “Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode”</atitle><jtitle>ETRI journal</jtitle><date>2022-02</date><risdate>2022</risdate><volume>44</volume><issue>1</issue><spage>169</spage><epage>169</epage><pages>169-169</pages><issn>1225-6463</issn><eissn>2233-7326</eissn><doi>10.4218/etr2.12429</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record>
fulltext	fulltext
identifier	ISSN: 1225-6463
ispartof	ETRI journal, 2022-02, Vol.44 (1), p.169-169
issn	1225-6463 2233-7326
language	eng
recordid	cdi_crossref_primary_10_4218_etr2_12429
source	Wiley Free Content; DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals
title	Corrigendum to “Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode”
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T10%3A04%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wiley_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Corrigendum%20to%20%E2%80%9COptimization%20of%20charge%20and%20multiplication%20layers%20of%2020%E2%80%90Gbps%20InGaAs/InAlAs%20avalanche%20photodiode%E2%80%9D&rft.jtitle=ETRI%20journal&rft.au=Sim,%20Jae%E2%80%90Sik&rft.date=2022-02&rft.volume=44&rft.issue=1&rft.spage=169&rft.epage=169&rft.pages=169-169&rft.issn=1225-6463&rft.eissn=2233-7326&rft_id=info:doi/10.4218/etr2.12429&rft_dat=%3Cwiley_cross%3EETR212429%3C/wiley_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true